Invention Grant
- Patent Title: Memory redundancy circuit techniques
- Patent Title (中): 存储器冗余电路技术
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Application No.: US10824905Application Date: 2004-04-15
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Publication No.: US07173867B2Publication Date: 2007-02-06
- Inventor: Esin Terzioglu
- Applicant: Esin Terzioglu
- Applicant Address: US CA Irvine
- Assignee: Broadcom Corporation
- Current Assignee: Broadcom Corporation
- Current Assignee Address: US CA Irvine
- Agency: McAndrews, Held & Malloy, Ltd.
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C8/00

Abstract:
In a memory module having a designated group of memory cells assigned to represent a logical portion of the memory structure, a memory redundancy circuit having a redundant group of memory cells; and a redundancy controller coupled with the designated group and the redundant group. The redundancy controller, which can include a redundancy decoder, assigns the redundant group to the logical portion of the memory structure in response to a preselected memory group condition, e.g., a “FAILED” memory group condition. The redundancy controller also can include selectable switches, for example, fuses, which can encode the preselected memory group condition. The designated group of memory cells and the redundant group of memory cells can be a memory row, a memory column, a preselected portion of a memory module, a selectable portion of a memory module, a memory module, or a combination thereof.
Public/Granted literature
- US20040196721A1 Memory redundance circuit techniques Public/Granted day:2004-10-07
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