发明授权
- 专利标题: Method of manufacturing thin quartz crystal wafer
- 专利标题(中): 薄型石英晶片的制造方法
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申请号: US10746400申请日: 2003-12-26
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公开(公告)号: US07174620B2公开(公告)日: 2007-02-13
- 发明人: Akio Chiba , Kozo Ono , Tamotsu Kurosawa
- 申请人: Akio Chiba , Kozo Ono , Tamotsu Kurosawa
- 申请人地址: JP Tokyo
- 专利权人: Nihon Dempa Kogyo Co., Ltd.
- 当前专利权人: Nihon Dempa Kogyo Co., Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Muirhead & Saturnelli, LLC
- 优先权: JP2002-380957 20021227
- 主分类号: H04R31/00
- IPC分类号: H04R31/00
摘要:
A method of manufacturing a thin quartz crystal wafer from a quartz crystal block which is cut from a crystal body of synthetic quartz crystal and has a flat principal surface, comprises the steps of (a) converging a laser beam at a region in said quartz crystal block at a predetermined depth from the principal surface thereof to cause multiphoton phenomenon state, thereby breaking Si—O—Si bonds of quartz crystal in said region to form voids in said region, and (b) peeling said thin quartz crystal wafer from a body of said quartz crystal block along said voids. The above process is repeatedly performed on one quartz crystal block to peel off a plurality of thin quartz crystal wafers successively from the principal surface of the quartz crystal block. Each of the thin quartz crystal wafers is divided into individual quartz crystal blanks for making quartz crystal units.
公开/授权文献
- US20040135467A1 Method of manufacturing thin quartz crystal wafer 公开/授权日:2004-07-15
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