Invention Grant
- Patent Title: Laser diode module with a built-in high-frequency modulation IC
- Patent Title (中): 激光二极管模块内置高频调制IC
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Application No.: US10998733Application Date: 2004-11-30
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Publication No.: US07177331B2Publication Date: 2007-02-13
- Inventor: Hsien-Cheng Yen , Chun-Ting Lin
- Applicant: Hsien-Cheng Yen , Chun-Ting Lin
- Applicant Address: TW Taoyuan County
- Assignee: Arima Optoelectronics Corp.
- Current Assignee: Arima Optoelectronics Corp.
- Current Assignee Address: TW Taoyuan County
- Agency: Rosenberg, Klein & Lee
- Main IPC: H01S3/10
- IPC: H01S3/10

Abstract:
A laser diode module with a built-in high-frequency modulation IC used to remove the reflected noise generated as the laser beam reads the signal to be played back and directly packaged within a metal cap. The high-frequency modulation IC creates an electrical connection through wire bonding with several connection legs and the laser diode module. The packaged laser diode module has four connection legs. Two of these connection legs act as a positive and a negative terminal for supplying power to the built-in high-frequency modulation IC. The other two connection legs are electrically connected to an external automatic power control (APC) circuit and act as the positive terminal of the laser diode and the photo diode, respectively. In this way, the inconvenience of externally attaching a high-frequency current producing circuit board can be avoided, the productivity can be enhanced and the radiation of electromagnetic interference (EMI) can be reduced.
Public/Granted literature
- US20060114950A1 Laser diode module with a built-in high-frequency modulation IC Public/Granted day:2006-06-01
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