公开(公告)号：US07677782B2

公开(公告)日：2010-03-16

申请号：US12010002

申请日：2008-01-18

Applicant: Chang-Yao Lin ,  Ren-Cheng Chao ,  Yung-Chung Sung

Inventor： Chang-Yao Lin ,  Ren-Cheng Chao ,  Yung-Chung Sung

IPC: F21V7/04

CPC classification number: F21S6/003 ,  F21Y2115/10 ,  G02B6/0025 ,  G02B6/0073 ,  G02B6/0085

Abstract: An LED flat lamp including a housing with a light-emitting area at the bottom thereof. The internal side thereof undergoes a reflexion treatment. At least one LED is disposed within the housing. A power connector is extended from the LED to the outside. The LED is installed on a circuit board. A light guide plate is installed at one side of the LED within the housing. The light exit side of the light guide plate is provided with a microstructure for a uniform light exit. Moreover, an optical film unit is attached to the bottom of the light guide plate such that the light-emitting area of the housing is covered with the optical film unit. The optical film unit consists of one or several brightness enhancement films and one or several diffusers. In this way, the problem of glaring light directly emitted by the prior art is resolved. The LED flat lamp in accordance with the invention can emit a non-glaring light and can be modularized into a standardized product.

Abstract translation: 一种LED平板灯，包括在其底部具有发光区域的壳体。 其内侧进行反射治疗。 至少一个LED设置在壳体内。 电源连接器从LED延伸到外部。 LED安装在电路板上。 导光板安装在LED外壳内的一侧。 导光板的光出射侧设置有用于均匀光出射的微结构。 此外，在导光板的底部安装光学膜单元，使得壳体的发光区域被光学膜单元覆盖。 光学膜单元由一个或几个亮度增强膜和一个或多个扩散器组成。 以这种方式解决了由现有技术直接发出的发光的问题。 根据本发明的LED平板灯可以发出非亮光，并且可以被模块化成标准化的产品。

公开(公告)号：US07199390B2

公开(公告)日：2007-04-03

申请号：US11500330

申请日：2006-08-08

Applicant: Pei-Jih Wang ,  Rupert Wu

Inventor： Pei-Jih Wang ,  Rupert Wu

IPC: H01L29/06 ,  H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336

CPC classification number: H01L33/02 ,  H01L33/14

Abstract: This invention is about a window interface layer in a light-emitting diode which comprises an n-type GaAs substrate with an n-type ohmic electrode at the bottom side thereof; an n-type AlGaInP cladding layer formed atop the substrate; an undoped AlGaInP active layer formed atop the n-type cladding layer; a p-AlGaInP cladding layer formed atop the active layer; a p-type window layer made of GaP; a p-type ohmic electrode formed atop the p-type window layer; and a highly doped p-type interface layer made of GaxIn1-xP (0.6≦x≦0.9) and interposed between the p-type cladding layer and p-type window layer wherein the highly doped p-GaInP interface layer possesses a band gap which is higher than that of the active layer and, however, smaller than that of the p-type cladding layer, and wherein the lattice constant lies between GaAs and GaP. In this way, the p-GaInP interface layer is interposed between a p-GaP window layer and a p-AlGaInP cladding layer for enhancing the film quality and the luminous efficiency as well as improving the electric property.

Abstract translation: 本发明涉及发光二极管中的窗口界面层，其包括在其底侧具有n型欧姆电极的n型GaAs衬底; 形成在衬底顶上的n型AlGaInP包覆层; 形成在n型包覆层顶上的未掺杂的AlGaInP有源层; 形成在有源层顶上的p-AlGaInP包层; 由GaP制成的p型窗口层; 形成在p型窗口层顶上的p型欧姆电极; 以及由Ga x In 1-x P（0.6 <= x <= 0.9）制成的高掺杂p型界面层，并且介于p型包覆层 和p型窗口层，其中高度掺杂的p-GaInP界面层具有比有源层的带隙高的带隙，然而，小于p型包覆层的带隙，并且其中晶格常数位于 GaAs和GaP。 以这种方式，p-GaInP界面层插入在p-GaP窗口层和p-AlGaInP包覆层之间，以提高膜质量和发光效率以及改善电性能。

公开(公告)号：US20020075185A1

公开(公告)日：2002-06-20

申请号：US10021666

申请日：2001-12-18

Applicant: Arima Optoelectronics Corp.

Inventor： Wang Nang Wang

IPC: H01Q001/38 ,  H01Q001/24

CPC classification number: H01Q1/243 ,  H01Q1/245 ,  H01Q1/38 ,  H01Q5/371

Abstract: A mobile communication device comprises a housing enclosing a circuit board that has communication components disposed thereon. The housing has opposite first and second surfaces. An antenna element is formed on the first surface of the housing for receiving and/or transmitting electromagnetic signals. An inner conductive layer is disposed on the second surface of the housing. The inner conductive layer is electrically connected to the antenna element and in signal communication with the circuit board.

Abstract translation: 移动通信设备包括封装有布置在其上的通信部件的电路板的壳体。 壳体具有相对的第一和第二表面。 天线元件形成在壳体的第一表面上，用于接收和/或发射电磁信号。 内部导电层设置在壳体的第二表面上。 内导电层电连接到天线元件并与电路板信号通信。

公开(公告)号：US08169086B2

公开(公告)日：2012-05-01

申请号：US12749711

申请日：2010-03-30

Applicant: Hui-Heng Wang

Inventor： Hui-Heng Wang

IPC: H01L23/48 ,  H01L23/52

CPC classification number: H01L33/38 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L33/62 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/05557 ,  H01L2224/05599 ,  H01L2224/451 ,  H01L2224/4807 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/4845 ,  H01L2224/48465 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/12041 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00015

Abstract: A semiconductor chip pad structure and a method for manufacturing the same, wherein a flat area at the center of the terminal pad and a roughened area at the periphery thereof are provided by use of the mask photolithograph technique and the roughening process. The central area provides a sufficient adhering force for the ball bond while the peripheral area prevents the wire-bonding vibrating energy from the lateral transmission to the external side of the terminal pad. In this way, the ball bond for the terminal pad may meet the wire-bonding requirements. Moreover, the ball bond quality is ensured.

Abstract translation: 一种半导体芯片焊盘结构及其制造方法，其中通过掩模光刻技术和粗糙化工艺提供端子焊盘中心处的平坦区域及其周边处的粗糙区域。 中心区域为球接合提供了足够的附着力，而周边区域防止了从侧向传输到终端焊盘的外侧的引线键合振动能。 以这种方式，端子焊盘的焊接可以满足引线键合要求。 此外，确保了球焊质量。

公开(公告)号：US07704770B2

公开(公告)日：2010-04-27

申请号：US11636557

申请日：2006-12-11

Applicant: Ying-Che Sung ,  Chao-Hsin Wang ,  Yi-Hsiung Chen ,  Shih-Yu Chiu

Inventor： Ying-Che Sung ,  Chao-Hsin Wang ,  Yi-Hsiung Chen ,  Shih-Yu Chiu

IPC: H01L21/00

CPC classification number: H01L33/0079

Abstract: The main objective of present invention is to provide a manufacturing method of light emitting diode that utilizes metal diffusion bonding technology. AlInGaP light emitting diode epitaxial structure on a temporary substrate is bonded to a permanent substrate having a thermal expansion coefficient similar to that of the epitaxial structure, and then the temporary substrate is removed to produce an LED having a vertical structure and better performance. The other objective of the present invention is to provide a high performance LED that uses metal diffusion technology and wet chemical etching technology to roughen the LED surface in order to improve light extraction efficiency.

Abstract translation: 本发明的主要目的是提供利用金属扩散接合技术的发光二极管的制造方法。 将临时衬底上的AlInGaP发光二极管外延结构结合到具有与外延结构类似的热膨胀系数的永久性衬底，然后移除临时衬底以产生具有垂直结构和更好性能的LED。 本发明的另一个目的是提供一种使用金属扩散技术和湿法化学蚀刻技术的高性能LED来粗糙化LED表面以提高光提取效率。

公开(公告)号：US20040004225A1

公开(公告)日：2004-01-08

申请号：US10289885

申请日：2002-11-07

Applicant: Arima Optoelectronics Corp.

Inventor： Ying-Che Sung ,  Chi-Wei Lu ,  Wen-Chieh Huang

IPC: H01L033/00

CPC classification number: H01L33/02 ,  H01L33/14 ,  H01L33/325

Abstract: A light emitting diode and manufacturing method thereof. The light emitting diode comprises a n-type semiconductor layer formed on a substrate, an active layer formed on the n-type semiconductor layer, a p-type cladding layer formed on the active layer, and a hydrogen-adsorbing layer formed on the p-type cladding layer. The hydrogen-adsorbing layer adsorbs the hydrogen atoms near the interface to the p-type cladding layer, thereby enhancing the doping concentration of p-type cladding layer, and forming a low-resist ohmic contact by which the performance and reliability of opto-electronic devices is improved.

Abstract translation: 发光二极管及其制造方法。 发光二极管包括形成在衬底上的n型半导体层，形成在n型半导体层上的有源层，形成在有源层上的p型覆层和形成在p型上的吸氢层 型包层。 氢吸附层吸附与p型包覆层界面附近的氢原子，从而提高p型覆层的掺杂浓度，形成低阻抗欧姆接触，通过该低电阻欧姆接触，光电子的性能和可靠性 设备得到改进。

公开(公告)号：US20110241059A1

公开(公告)日：2011-10-06

申请号：US12749816

申请日：2010-03-30

Applicant: HUI-HENG WANG

Inventor： HUI-HENG WANG

IPC: H01L33/00 ,  H01L21/78

CPC classification number: H01L33/385 ,  H01L24/03 ,  H01L24/05 ,  H01L24/32 ,  H01L33/20 ,  H01L33/62 ,  H01L2224/04042 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2933/0016 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: An LED die structure and a method for manufacturing the bottom terminal of the LED die structure, wherein the LED die includes a substrate, a light-emitting layer positioned at the top of the substrate, at least one bottom terminal positioned at the bottom of the substrate, at least one top terminal positioned at the top of the light-emitting layer, and at least one side terminal positioned at the side of the bottom of the substrate, and wherein the method comprises the following steps: a) recessing the bottom side of the wafer to a predetermined height when the LED is formed in a wafer type; b) coating the metal material to the bottom of the wafer and to the inside of the recesses; and c) dividing the wafer along the recesses into dies. In this way, the bottom terminal and the side terminal are formed at the bottom of the substrate of the die. Moreover, the LED die structure enhances the quality of the electric connection between the die-bonding paste and the LED die.

Abstract translation: 一种LED管芯结构和用于制造LED管芯结构的底部端子的方法，其中所述LED管芯包括衬底，位于所述衬底顶部的发光层，位于所述衬底的底部的至少一个底部端子 衬底，位于发光层顶部的至少一个顶部端子和位于衬底底部侧面的至少一个侧面端子，并且其中该方法包括以下步骤：a）使底侧凹陷 当晶片类型形成LED时，晶片达到预定高度; b）将金属材料涂覆到晶片的底部和凹部的内部; 以及c）沿着所述凹槽将所述晶片分成模具。 以这种方式，底部端子和侧端子形成在模具的基板的底部。 此外，LED管芯结构提高了芯片粘合膏和LED管芯之间的电连接的质量。

公开(公告)号：US20100264453A1

公开(公告)日：2010-10-21

申请号：US12749711

申请日：2010-03-30

Applicant: HUI-HENG WANG

Inventor： HUI-HENG WANG

IPC: H01L33/00

CPC classification number: H01L33/38 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L33/62 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/05557 ,  H01L2224/05599 ,  H01L2224/451 ,  H01L2224/4807 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/4845 ,  H01L2224/48465 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/12041 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00015

Abstract: A semiconductor chip pad structure and a method for manufacturing the same, wherein a flat area at the center of the terminal pad and a roughened area at the periphery thereof are provided by use of the mask photolithograph technique and the roughening process. The central area provides a sufficient adhering force for the ball bond while the peripheral area prevents the wire-bonding vibrating energy from the lateral transmission to the external side of the terminal pad. In this way, the ball bond for the terminal pad may meet the wire-bonding requirements. Moreover, the ball bond quality is ensured.

Abstract translation: 一种半导体芯片焊盘结构及其制造方法，其中通过掩模光刻技术和粗糙化工艺提供端子焊盘中心处的平坦区域及其周边处的粗糙区域。 中心区域为球接合提供了足够的附着力，而周边区域防止了从侧向传输到终端焊盘的外侧的引线键合振动能。 以这种方式，端子焊盘的焊接可以满足引线键合要求。 此外，确保了球焊质量。

公开(公告)号：US07781755B2

公开(公告)日：2010-08-24

申请号：US12385906

申请日：2009-04-23

Applicant: Ying-Che Sung ,  Chao-Hsin Wang ,  Yi-Hsiung Chen ,  Shih-Yu Chiu

Inventor： Ying-Che Sung ,  Chao-Hsin Wang ,  Yi-Hsiung Chen ,  Shih-Yu Chiu

IPC: H01L29/06

CPC classification number: H01L33/0079

Abstract: The main objective of present invention is to provide a manufacturing method of light emitting diode that utilizes metal diffusion bonding technology. AlInGaP light emitting diode epitaxial structure on a temporary substrate is bonded to a permanent substrate having a thermal expansion coefficient similar to that of the epitaxial structure, and then the temporary substrate is removed to produce an LED having a vertical structure and better performance. The other objective of the present invention is to provide a high performance LED that uses metal diffusion technology and wet chemical etching technology to roughen the LED surface in order to improve light extraction efficiency.

Abstract translation: 本发明的主要目的是提供利用金属扩散接合技术的发光二极管的制造方法。 将临时衬底上的AlInGaP发光二极管外延结构结合到具有与外延结构类似的热膨胀系数的永久性衬底，然后移除临时衬底以产生具有垂直结构和更好性能的LED。 本发明的另一个目的是提供一种使用金属扩散技术和湿法化学蚀刻技术的高性能LED来粗糙化LED表面以提高光提取效率。

公开(公告)号：US07023892B2

公开(公告)日：2006-04-04

申请号：US10038488

申请日：2002-01-03

Applicant: Wang Nang Wang ,  Yury Georgievich Shreter ,  Yury Toomasovich Rebane

Inventor： Wang Nang Wang ,  Yury Georgievich Shreter ,  Yury Toomasovich Rebane

IPC: A01S5/00

CPC classification number: H01S5/22 ,  H01S5/0425 ,  H01S5/1071 ,  H01S5/2027 ,  H01S2301/166

Abstract: The invention provides a method and device for light generation wherein the device comprises a lower electrode, a substrate formed on the lower electrode, a triangle mesa structure formed on the substrate for lateral confinement of light, a triangle optical cavity formed in the mesa structure, an upper electrode formed on the mesa structure, and a plurality of contact spots formed on the upper electrode corresponding to the maxima of optical field intensity for at least one optical mode on a lateral plane in the triangle optical cavity. Another embodiment of the device according to the invention further comprises a plurality of triangle mesa structures, along with a light output structure for directing and controlling light output from the device, which are formed on the substrate in various topologies such as a matrix or an array.