发明授权
- 专利标题: Light-emitting device and method for manufacturing the same
- 专利标题(中): 发光装置及其制造方法
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申请号: US10976987申请日: 2004-11-01
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公开(公告)号: US07179672B2公开(公告)日: 2007-02-20
- 发明人: Koji Asakawa , Akira Fujimoto , Hitoshi Sugiyama , Kenichi Ohashi , Kenji Suzuki , Junichi Tonotani
- 申请人: Koji Asakawa , Akira Fujimoto , Hitoshi Sugiyama , Kenichi Ohashi , Kenji Suzuki , Junichi Tonotani
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权: JP2001-402004 20011228
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A nanometer size roughened structure is formed on a surface of a light-emitting element, and luminous efficiency is improved.The roughened structure on the surface of the light-emitting element of the invention is formed into the following shape such that the refractive index smoothly changes: (1) the mean diameter of projections on the roughened surface is smaller than the light wavelength; (2) a pitch of the roughened surface is irregular; and (3) positions of the top and bottom of the roughened surface are distributed from their mean values within the light wavelength in order to give a smooth gradient of the refractive index. The surface of such light-emitting element is obtained by forming a thin film on the surface of the light-emitting element using a resin composition which contains a block copolymer or graft copolymer and forms a micophase-separated structure in a self-organization manner; selectively removing at least one phase of the microphase-separated structure of the thin film formed on the surface; and etching the surface of the light-emitting element using the remaining phase as an etching mask.
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