发明授权
US07179692B2 Method of manufacturing a semiconductor device having a fin structure
有权
具有翅片结构的半导体器件的制造方法
- 专利标题： Method of manufacturing a semiconductor device having a fin structure
- 专利标题（中）： 具有翅片结构的半导体器件的制造方法
-
申请号： US10913409申请日： 2004-08-09
-
公开(公告)号： US07179692B2公开(公告)日： 2007-02-20
- 发明人: Bin Yu , Shibly S. Ahmed , Judy Xilin An , Srikanteswara Dakshina-Murthy , Zoran Krivokapic , Haihong Wang
- 申请人： Bin Yu , Shibly S. Ahmed , Judy Xilin An , Srikanteswara Dakshina-Murthy , Zoran Krivokapic , Haihong Wang
- 申请人地址： US CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Harrity Snyder, LLP
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/84
摘要：
A method of forming a semiconductor device includes forming a fin on an insulating layer, where the fin includes a number of side surfaces, a top surface and a bottom surface. The method also includes forming a gate on the insulating layer, where the gate has a substantially U-shaped cross-section at a channel region of the semiconductor device.
公开/授权文献
信息查询
IPC分类:
