发明授权
- 专利标题： Thin-film devices and method for fabricating the same on same substrate
- 专利标题（中）： 薄膜器件及其制造方法
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申请号： US10954674申请日： 2004-09-30
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公开(公告)号： US07180156B2公开(公告)日： 2007-02-20
- 发明人: Shih-Chang Chang , Yaw-Ming Tsai
- 申请人： Shih-Chang Chang , Yaw-Ming Tsai
- 申请人地址： TW Chu-Nan
- 专利权人： TPO Displays Corp.
- 当前专利权人： TPO Displays Corp.
- 当前专利权人地址： TW Chu-Nan
- 代理机构： Liu & Liu
- 优先权： TW93110215A 20040413
- 主分类号： H01L29/00
- IPC分类号： H01L29/00
摘要：
To satisfy the different requirement of TFTs function as peripheral driving circuit and pixel switching device, the modified TFT structure with various thicknesses of gate insulating layers is disclosed. For the peripheral driving circuit, the thinner thickness of the gate-insulating layer is formed, the higher driving ability the TFT performs. However, for the pixel switching device, the thicker thickness of the gate insulating layer is formed, the better reliability the TFT has. The present invention provides a first TFT (peripheral driving circuit) comprising a first gate insulating layer and a second TFT (pixel switching device) comprising a first and second gate insulating layer. Thus, the gate insulating layer of the peripheral driving circuit has a thickness less then that of the pixel switching device.
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