公开(公告)号：US20110308569A1

公开(公告)日：2011-12-22

申请号：US13163732

申请日：2011-06-20

Applicant: Hung-Chun TSAI ,  Liang-Ji Chen ,  Yu-Ting Lin ,  Yaw-Ming Tsai ,  Ker-Tai Chu

Inventor： Hung-Chun TSAI ,  Liang-Ji Chen ,  Yu-Ting Lin ,  Yaw-Ming Tsai ,  Ker-Tai Chu

IPC: H01L31/05

CPC classification number: H01L31/043 ,  Y02E10/50

Abstract: A multi-terminal solar panel includes a first substrate, a first solar cell layer, a transparent intercellular layer, a second solar cell layer and a second substrate. The first solar cell layer is disposed on the first substrate and has a first bandgap. The first solar cell layer includes two first terminal outputs, arranged substantially in parallel with each other, at two opposite edges thereof. The transparent intercellular layer is disposed on the first solar cell layer and exposes the two first terminal outputs. The second solar cell layer is disposed on the transparent intercellular layer and has a second bandgap. The second solar cell layer includes two second terminal outputs, arranged substantially in parallel with each other, at two opposite edges thereof. The second substrate is disposed on the second solar cell layer, wherein the two second terminal outputs are substantially perpendicular to the two first terminal outputs.

Abstract translation: 多端子太阳能电池板包括第一基板，第一太阳能电池层，透明细胞间层，第二太阳能电池层和第二基板。 第一太阳能电池层设置在第一基板上并且具有第一带隙。 第一太阳能电池层包括在其两个相对边缘处彼此基本平行地布置的两个第一端子输出。 透明的细胞间层设置在第一太阳能电池层上并暴露出两个第一端子输出端。 第二太阳能电池层设置在透明细胞间层上并具有第二带隙。 第二太阳能电池层包括在其两个相对边缘处彼此基本平行地布置的两个第二端子输出。 第二基板设置在第二太阳能电池层上，其中两个第二端子输出基本上垂直于两个第一端子输出。

公开(公告)号：US20080129196A1

公开(公告)日：2008-06-05

申请号：US12008530

申请日：2008-01-11

Applicant: Yaw-Ming Tsai ,  Hsiu-Chun Hsieh ,  Shih-Chang Chang

Inventor： Yaw-Ming Tsai ,  Hsiu-Chun Hsieh ,  Shih-Chang Chang

IPC: H01L27/28 ,  H01L33/00 ,  H01L29/04

CPC classification number: H01L27/322 ,  H01L27/3244 ,  H01L51/56

Abstract: A light-emitting device and the fabrication method thereof. A substrate is provided. A plurality of active elements are formed on the substrate, defining a plurality of pixel areas. A color filter is formed on the pixel areas. The surface of the color filter is planarized to reduce roughness. An electrode is formed on the color filter. An light-emitting layer is formed on the electrode. A second electrode is formed on the light-emitting layer.

Abstract translation: 发光元件及其制造方法。 提供基板。 在衬底上形成多个有源元件，限定多个像素区域。 在像素区域上形成滤色器。 将滤色器的表面平坦化以减少粗糙度。 在滤色片上形成电极。 在电极上形成发光层。 在发光层上形成第二电极。

公开(公告)号：US20070285001A1

公开(公告)日：2007-12-13

申请号：US11422896

申请日：2006-06-08

Applicant: Yaw-Ming Tsai ,  Ryuji Nishikawa ,  Liang-Jyi Chen ,  Hsiang-Lun Hsu ,  Po-Yen Lu ,  Chung-Chih Wu ,  Yin-Jui Lu ,  Chieh-Wei Chen

Inventor： Yaw-Ming Tsai ,  Ryuji Nishikawa ,  Liang-Jyi Chen ,  Hsiang-Lun Hsu ,  Po-Yen Lu ,  Chung-Chih Wu ,  Yin-Jui Lu ,  Chieh-Wei Chen

IPC: H01L51/50 ,  H05B33/26

CPC classification number: H05B33/22 ,  H01L51/5221 ,  H01L51/5278

Abstract: Systems for displaying images. A representative system incorporates an electroluminescent diode that includes a composite electrode structure. Particularly, the composite electrode structure comprises a layer containing alkali or alkaline earth compounds, and a metal oxide layer or semiconductor layer. Wherein, the alkali or alkaline earth compound has carbonyl group or fluorine.

Abstract translation: 用于显示图像的系统 代表性系统包括电致发光二极管，其包括复合电极结构。 特别地，复合电极结构包括含有碱金属或碱土金属化合物的层，以及金属氧化物层或半导体层。 其中碱金属或碱土金属化合物具有羰基或氟。

公开(公告)号：US07180156B2

公开(公告)日：2007-02-20

申请号：US10954674

申请日：2004-09-30

Applicant: Shih-Chang Chang ,  Yaw-Ming Tsai

Inventor： Shih-Chang Chang ,  Yaw-Ming Tsai

IPC: H01L29/00

CPC classification number: H01L27/1237 ,  H01L27/1214

Abstract: To satisfy the different requirement of TFTs function as peripheral driving circuit and pixel switching device, the modified TFT structure with various thicknesses of gate insulating layers is disclosed. For the peripheral driving circuit, the thinner thickness of the gate-insulating layer is formed, the higher driving ability the TFT performs. However, for the pixel switching device, the thicker thickness of the gate insulating layer is formed, the better reliability the TFT has. The present invention provides a first TFT (peripheral driving circuit) comprising a first gate insulating layer and a second TFT (pixel switching device) comprising a first and second gate insulating layer. Thus, the gate insulating layer of the peripheral driving circuit has a thickness less then that of the pixel switching device.

Abstract translation: 为了满足作为外围驱动电路和像素开关器件的TFT的不同要求，公开了具有各种厚度的栅极绝缘层的改进的TFT结构。 对于外围驱动电路，形成栅极绝缘层的厚度越薄，TFT的驱动能力越强。 然而，对于像素开关器件，形成栅极绝缘层的较厚的厚度，TFT具有更好的可靠性。 本发明提供一种第一TFT（外围驱动电路），包括第一栅极绝缘层和包括第一和第二栅极绝缘层的第二TFT（像素开关器件）。 因此，外围驱动电路的栅极绝缘层的厚度小于像素开关器件的厚度。

公开(公告)号：US07145209B2

公开(公告)日：2006-12-05

申请号：US10850980

申请日：2004-05-20

Applicant: Shih-Chang Chang ,  De-Hua Deng ,  Chun-Hsiang Fang ,  Yaw-Ming Tsai

Inventor： Shih-Chang Chang ,  De-Hua Deng ,  Chun-Hsiang Fang ,  Yaw-Ming Tsai

IPC: H01L29/94 ,  H01L31/062

CPC classification number: H01L27/1214 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78645

Abstract: A thin film transistor (TFT) with a self-aligned lightly-doped region and a fabrication method thereof. An active layer has a channel region, a first doped region and a second doped region, in which the first doped region is disposed between the channel region and the second doped region. A gate insulating layer formed overlying the active layer has a central region, a shielding region and an extending region. The shielding region is disposed between the central region and the extending region, the central region covers the channel region, the shielding region covers the first doped region, and the extending region covers the second doped region. The shielding region is thicker than the extending region. A gate layer is formed overlying the gate insulating layer, covers the central region and exposes the shielding region and the extending region.

Abstract translation: 具有自对准轻掺杂区域的薄膜晶体管（TFT）及其制造方法。 有源层具有沟道区，第一掺杂区和第二掺杂区，其中第一掺杂区设置在沟道区和第二掺杂区之间。 形成在有源层上的栅极绝缘层具有中心区域，屏蔽区域和延伸区域。 屏蔽区域设置在中心区域和延伸区域之间，中心区域覆盖沟道区域，屏蔽区域覆盖第一掺杂区域，延伸区域覆盖第二掺杂区域。 屏蔽区域比扩展区域厚。 形成覆盖栅极绝缘层的栅极层，覆盖中心区域并使屏蔽区域和延伸区域露出。

公开(公告)号：US07109960B2

公开(公告)日：2006-09-19

申请号：US10604128

申请日：2003-06-27

Applicant: Ching-Tung Wang ,  Hsu-Yu Yun ,  Yaw-Ming Tsai

Inventor： Ching-Tung Wang ,  Hsu-Yu Yun ,  Yaw-Ming Tsai

IPC: G09G3/36 ,  G09G5/00 ,  G09G5/10

CPC classification number: G09G3/3611

Abstract: A driving circuit for display and the operating method thereof are provided. The driving circuit uses the data controller with multi-gray scale to make the color driving signal correspond to the related gray of the multi-gray scale, and uses the inverter to output the color output signal to a display to make the color output signal have more levels of color, such that it can achieve the aim of full color. As the invention does not require use of the memory and digital to analog converter, which consume large amounts of power, it can achieve the aim of saving power.

Abstract translation: 提供一种用于显示的驱动电路及其操作方法。 驱动电路采用多灰度数据控制器，使彩色驱动信号与多灰阶相关灰度相对应，并使用逆变器将彩色输出信号输出到显示器，使彩色输出信号有 更多的色彩水平，使其可以达到全彩的目的。 由于本发明不需要使用消耗大量功率的存储器和数模转换器，所以可实现节能的目的。

公开(公告)号：US20060197441A1

公开(公告)日：2006-09-07

申请号：US11071746

申请日：2005-03-03

Applicant: Yaw-Ming Tsai ,  Hsiu-Chun Hsieh ,  Shih-Chang Chang

Inventor： Yaw-Ming Tsai ,  Hsiu-Chun Hsieh ,  Shih-Chang Chang

IPC: H01J1/62 ,  H01J63/04

CPC classification number: H01L27/3258 ,  H01L27/3246 ,  H01L51/5206

Abstract: Array substrates for electroluminescent (EL) devices and methods of forming the same are disclosed. The array substrates for electroluminescent (EL) devices include a substrate with at least one thin film transistor formed thereon, covered by a planarization layer. A first dielectric passivation layer with a contact hole therein covers parts of the planarization layer and exposes a source/drain electrode of the thin film transistor. A transparent electrode covers a portion of the first electric passivation layer and fills the contact hole, and is partly exposed by a patterned second dielectric passivation formed thereon. A plurality of spacers covers a portion of the second dielectric passivation layer to define an organic electroluminescent area with an exposed transparent electrode. An organic electroluminescent layer covers the exposed transparent electrode, and an electrode covers the organic electroluminescent layer.

Abstract translation: 公开了用于电致发光（EL）器件的阵列衬底及其形成方法。 用于电致发光（EL）器件的阵列衬底包括其上形成有由平坦化层覆盖的至少一个薄膜晶体管的衬底。 具有接触孔的第一介电钝化层覆盖平坦化层的部分并且暴露薄膜晶体管的源极/漏极。 透明电极覆盖第一电钝化层的一部分并填充接触孔，并且通过形成在其上的图案化的第二介电钝化部分地露出。 多个间隔物覆盖第二电介质钝化层的一部分以限定具有暴露的透明电极的有机电致发光区域。 有机电致发光层覆盖暴露的透明电极，电极覆盖有机电致发光层。

公开(公告)号：US07033902B2

公开(公告)日：2006-04-25

申请号：US10947210

申请日：2004-09-23

Applicant: Shih-Chang Chang ,  De-Hua Deng ,  Yaw-Ming Tsai

Inventor： Shih-Chang Chang ,  De-Hua Deng ,  Yaw-Ming Tsai

IPC: H01L21/331 ,  H01L21/00 ,  H01L21/84

CPC classification number: H01L29/78621

Abstract: A method for making a thin film transistor (TFT) with a lightly doped region. The process of the invention is compatible with the currently common TFT manufacturing processes. A substrate with a photoresist layer thereon is subjected to two-step exposure with different exposure energies to form a full-through pattern and a non-through pattern after development. The same photoresist layer is subjected to two etching steps to form a gate region and an intra-gate region. The gate region and the intra-gate region are respectively doped with different dopant concentrations. Therefore, the number of times forming and exposing the photoresist layer is reduced.

Abstract translation: 一种制造具有轻掺杂区域的薄膜晶体管（TFT）的方法。 本发明的方法与当前常见的TFT制造工艺兼容。 对其上具有光致抗蚀剂层的基片进行不同曝光能量的两步曝光，以在显影后形成全通图案和非贯穿图案。 对相同的光致抗蚀剂层进行两个蚀刻步骤以形成栅极区域和栅极内区域。 栅极区域和栅极间区域分别掺杂有不同的掺杂剂浓度。 因此，光致抗蚀剂层的形成和曝光次数减少。

公开(公告)号：US20060063343A1

公开(公告)日：2006-03-23

申请号：US10947210

申请日：2004-09-23

Applicant: Shih-Chang Chang ,  De-Hua Deng ,  Yaw-Ming Tsai

Inventor： Shih-Chang Chang ,  De-Hua Deng ,  Yaw-Ming Tsai

IPC: H01L21/331

CPC classification number: H01L29/78621

Abstract: A method for making a thin film transistor (TFT) with a lightly doped region. The process of the invention is compatible with the currently common TFT manufacturing processes. A substrate with a photoresist layer thereon is subjected to two-step exposure with different exposure energies to form a full-through pattern and a non-through pattern after development. The same photoresist layer is subjected to two etching steps to form a gate region and an intra-gate region. The gate region and the intra-gate region are respectively doped with different dopant concentrations. Therefore, the number of times forming and exposing the photoresist layer is reduced.

Abstract translation: 一种制造具有轻掺杂区域的薄膜晶体管（TFT）的方法。 本发明的方法与当前常见的TFT制造工艺兼容。 对其上具有光致抗蚀剂层的基片进行不同曝光能量的两步曝光，以在显影后形成全通图案和非贯穿图案。 对相同的光致抗蚀剂层进行两个蚀刻步骤以形成栅极区域和栅极内区域。 栅极区域和栅极间区域分别掺杂有不同的掺杂剂浓度。 因此，光致抗蚀剂层的形成和曝光次数减少。

公开(公告)号：US20050158981A1

公开(公告)日：2005-07-21

申请号：US10710200

申请日：2004-06-25

Applicant: Shih-Chang Chang ,  Hsiu-Chun Hsieh ,  Yaw-Ming Tsai

Inventor： Shih-Chang Chang ,  Hsiu-Chun Hsieh ,  Yaw-Ming Tsai

IPC: G02F1/1362 ,  H01L21/00 ,  H01L21/44 ,  H01L21/77 ,  H01L21/84

CPC classification number: G02F1/136227 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1248

Abstract: First, a substrate with at least one thin film transistor is provided. A protection layer and a planarization layer are sequentially formed on the substrate. Then, the planarization layer is patterned and an opening is formed in the planarization above the thin film transistor. An etching process is performed by using the planarization layer as a hard mask to form a first contact hole, which is extending through to the thin film transistor, in the protection layer. Then, the planarization layer surrounding the opening is partially removed to form a second contact hole in the planarization layer above the first contact hole. After that, a transparent conductive layer is formed on the surface of the planarization layer, the second contact hole, the first contact hole, partial contact plug and electrically connected to the thin film transistor via the first contact hole and the second contact hole.

Abstract translation: 首先，提供具有至少一个薄膜晶体管的衬底。 在基板上依次形成保护层和平坦化层。 然后，对平坦化层进行图案化，并且在薄膜晶体管上方的平坦化中形成开口。 通过使用平坦化层作为硬掩模来进行蚀刻工艺，以在保护层中形成延伸到薄膜晶体管的第一接触孔。 然后，围绕开口的平坦化层被部分去除，以在第一接触孔上方的平坦化层中形成第二接触孔。 之后，在平坦化层，第二接触孔，第一接触孔，部分接触插塞的表面上形成透明导电层，经由第一接触孔和第二接触孔与薄膜晶体管电连接。