Invention Grant
- Patent Title: Direct synthesis of oxide nanostructures of low-melting metals
- Patent Title (中): 直接合成低熔点金属氧化物纳米结构
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Application No.: US10664072Application Date: 2003-09-16
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Publication No.: US07182812B2Publication Date: 2007-02-27
- Inventor: Mahendra Kumar Sunkara , Shashank Sharma
- Applicant: Mahendra Kumar Sunkara , Shashank Sharma
- Applicant Address: US KY Louisville
- Assignee: University of Louisville
- Current Assignee: University of Louisville
- Current Assignee Address: US KY Louisville
- Agency: Carrithers Law Office PLLC
- Agent David W. Carrithers
- Main IPC: C30B23/00
- IPC: C30B23/00 ; C30B25/00

Abstract:
The bulk synthesis of highly crystalline noncatalytic low melting metals such as β-gallium oxide tubes, nanowires, and nanopaintbrushes is accomplished using molten gallium and microwave plasma containing a mixture of monoatomic oxygen and hydrogen. Gallium oxide nanowires were 20–100 nm thick and tens to hundreds of microns long. Transmission electron microscopy (TEM) revealed the nanowires to be highly crystalline and devoid of any structural defects. Results showed that multiple nucleation and growth of gallium oxide nanostructures can occur directly out of molten gallium exposed to appropriate composition of hydrogen and oxygen in the gas phase. These gallium oxide nanostructures are of particular interest for opto-electronic devices and catalytic applications.
Public/Granted literature
- US20050072351A1 Direct synthesis of oxide nanostructures of low-melting metals Public/Granted day:2005-04-07
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