发明授权
- 专利标题： Manufacturing method of semiconductor device
- 专利标题（中）： 半导体器件的制造方法
-
申请号： US10998804申请日： 2004-11-30
-
公开(公告)号： US07183170B2公开(公告)日： 2007-02-27
- 发明人: Yoshitaka Nakamura , Tsuyoshi Kawagoe , Hiroshi Sakuma , Isamu Asano , Keiji Kuroki , Hidekazu Goto , Shinpei Iijima
- 申请人： Yoshitaka Nakamura , Tsuyoshi Kawagoe , Hiroshi Sakuma , Isamu Asano , Keiji Kuroki , Hidekazu Goto , Shinpei Iijima
- 申请人地址： JP Tokyo
- 专利权人： Elpida Memory, Inc.
- 当前专利权人： Elpida Memory, Inc.
- 当前专利权人地址： JP Tokyo
- 代理机构： Young & Thompson
- 优先权： JP2003-401316 20031201
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
After an upper electrode protective film is formed such that it is in a firm contact with ruthenium film of the upper electrode without damaging the ruthenium film, the upper electrode is etched, thereby, a MIM capacitor is obtained in which leak current is not increased due to oxidation of the ruthenium film of the upper electrode.
公开/授权文献
- US20050118762A1 Manufacturing method of semiconductor device 公开/授权日：2005-06-02
信息查询
IPC分类:
