公开(公告)号：US07183170B2

公开(公告)日：2007-02-27

申请号：US10998804

申请日：2004-11-30

申请人： Yoshitaka Nakamura ,  Tsuyoshi Kawagoe ,  Hiroshi Sakuma ,  Isamu Asano ,  Keiji Kuroki ,  Hidekazu Goto ,  Shinpei Iijima

发明人： Yoshitaka Nakamura ,  Tsuyoshi Kawagoe ,  Hiroshi Sakuma ,  Isamu Asano ,  Keiji Kuroki ,  Hidekazu Goto ,  Shinpei Iijima

IPC分类号： H01L21/20

CPC分类号： H01L28/65 ,  H01L21/32136 ,  H01L27/10814 ,  H01L27/10852 ,  H01L27/10882 ,  H01L28/91

摘要： After an upper electrode protective film is formed such that it is in a firm contact with ruthenium film of the upper electrode without damaging the ruthenium film, the upper electrode is etched, thereby, a MIM capacitor is obtained in which leak current is not increased due to oxidation of the ruthenium film of the upper electrode.

摘要翻译： 在形成上部电极保护膜使得其与上部电极的钌膜牢固接触而不损坏钌膜之后，蚀刻上部电极，由此获得漏电流不增加的MIM电容器 以使上电极的钌膜氧化。

公开(公告)号：US20050118762A1

公开(公告)日：2005-06-02

申请号：US10998804

申请日：2004-11-30

申请人： Yoshitaka Nakamura ,  Tsuyoshi Kawagoe ,  Hiroshi Sakuma ,  Isamu Asano ,  Keiji Kuroki ,  Hidekazu Goto ,  Shinpei Iijima

发明人： Yoshitaka Nakamura ,  Tsuyoshi Kawagoe ,  Hiroshi Sakuma ,  Isamu Asano ,  Keiji Kuroki ,  Hidekazu Goto ,  Shinpei Iijima

IPC分类号： C23C16/40 ,  H01L21/02 ,  H01L21/316 ,  H01L21/3213 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： H01L28/65 ,  H01L21/32136 ,  H01L27/10814 ,  H01L27/10852 ,  H01L27/10882 ,  H01L28/91

摘要： After an upper electrode protective film is formed such that it is in a firm contact with ruthenium film of the upper electrode without damaging the ruthenium film, the upper electrode is etched, thereby, a MIM capacitor is obtained in which leak current is not increased due to oxidation of the ruthenium film of the upper electrode.

摘要翻译： 在形成上部电极保护膜使得其与上部电极的钌膜牢固接触而不损坏钌膜之后，蚀刻上部电极，由此获得漏电流不增加的MIM电容器 以使上电极的钌膜氧化。

公开(公告)号：US06927439B2

公开(公告)日：2005-08-09

申请号：US10923002

申请日：2004-08-23

申请人： Hiroshi Moriya ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Shinpei Iijima ,  Isamu Asano ,  Yuzuru Ohji ,  Yoshitaka Nakamura

发明人： Hiroshi Moriya ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Shinpei Iijima ,  Isamu Asano ,  Yuzuru Ohji ,  Yoshitaka Nakamura

IPC分类号： H01L27/10 ,  H01L21/02 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/76

CPC分类号： H01L28/60 ,  H01L27/10814 ,  H01L28/55

摘要： A semiconductor device equipped with information storage capacitor comprising a first capacitor electrode, an oxide film, a second capacitor electrode and insulating films containing silicon as a main constituting element, wherein at least one of first and second capacitor electrodes contains as a main constituting element at least one element selected from rhodium, ruthenium, iridium, osmium and platinum, and as an adding element at least one element selected from palladium, nickel, cobalt and titanium, is excellent in adhesiveness between the capacitor electrodes and the insulating films.

摘要翻译： 一种配备有信息存储电容器的半导体器件，包括第一电容器电极，氧化物膜，第二电容器电极和以硅为主要构成元素的绝缘膜，其中，第一和第二电容器电极中的至少一个包含作为主要构成元素 选自铑，钌，铱，锇和铂中的至少一种元素，并且作为添加元素，选自钯，镍，钴和钛中的至少一种元素，电容器电极和绝缘膜之间的粘附性优异。

公开(公告)号：US20050024811A1

公开(公告)日：2005-02-03

申请号：US10923002

申请日：2004-08-23

申请人： Hiroshi Moriya ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Shinpei Iijima ,  Isamu Asano ,  Yuzuru Ohji ,  Yoshitaka Nakamura

发明人： Hiroshi Moriya ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Shinpei Iijima ,  Isamu Asano ,  Yuzuru Ohji ,  Yoshitaka Nakamura

IPC分类号： H01L27/10 ,  H01L21/02 ,  H01L21/8242 ,  H01L27/108 ,  H01G4/008

CPC分类号： H01L28/60 ,  H01L27/10814 ,  H01L28/55

摘要： A semiconductor device equipped with information storage capacitor comprising a first capacitor electrode, an oxide film, a second capacitor electrode and insulating films containing silicon as a main constituting element, wherein at least one of first and second capacitor electrodes contains as a main constituting element at least one element selected from rhodium, ruthenium, iridium, osmium and platinum, and as an adding element at least one element selected from palladium, nickel, cobalt and titanium, is excellent in adhesiveness between the capacitor electrodes and the insulating films.

摘要翻译： 一种配备有信息存储电容器的半导体器件，包括第一电容器电极，氧化物膜，第二电容器电极和以硅为主要构成元素的绝缘膜，其中，第一和第二电容器电极中的至少一个包含作为主要构成元素 选自铑，钌，铱，锇和铂中的至少一种元素，并且作为添加元素，选自钯，镍，钴和钛中的至少一种元素，电容器电极和绝缘膜之间的粘附性优异。

公开(公告)号：US06781172B2

公开(公告)日：2004-08-24

申请号：US09800493

申请日：2001-03-08

申请人： Hiroshi Moriya ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Shinpei Iijima ,  Isamu Asano ,  Yuzuru Ohji ,  Yoshitaka Nakamura

发明人： Hiroshi Moriya ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Shinpei Iijima ,  Isamu Asano ,  Yuzuru Ohji ,  Yoshitaka Nakamura

IPC分类号： H01L2976

CPC分类号： H01L28/60 ,  H01L27/10814 ,  H01L28/55

摘要： A semiconductor device equipped with information storage capacitor comprising a first capacitor electrode, an oxide film, a second capacitor electrode and insulating films containing silicon as a main constituting element, wherein at least one of first and second capacitor electrodes contains as a main constituting element at least one element selected from rhodium, ruthenium, iridium, osmium and platinum, and as an adding element at least one element selected from palladium, nickel, cobalt and titanium, is excellent in adhesiveness between the capacitor electrodes and the insulating films.

摘要翻译： 一种配备有信息存储电容器的半导体器件，包括第一电容器电极，氧化物膜，第二电容器电极和以硅为主要构成元素的绝缘膜，其中，第一和第二电容器电极中的至少一个包含作为主要构成元素 选自铑，钌，铱，锇和铂中的至少一种元素，并且作为添加元素，选自钯，镍，钴和钛中的至少一种元素，电容器电极和绝缘膜之间的粘附性优异。

公开(公告)号：US06653676B2

公开(公告)日：2003-11-25

申请号：US09918228

申请日：2001-07-30

申请人： Robert Tsu ,  Isamu Asano ,  Shinpei Iijima ,  William R. McKee

发明人： Robert Tsu ,  Isamu Asano ,  Shinpei Iijima ,  William R. McKee

IPC分类号： H01L27108

CPC分类号： H01L28/75 ,  H01L21/28518 ,  H01L21/76897 ,  H01L28/55 ,  H01L28/90

摘要： The present invention discloses a novel integrated circuit capacitor and a method of forming such a capacitor. The capacitor formation begins with a base electrode 18 adjacent an insulating region 26. This base electrode 18 can comprise either polysilicon or a metal. A layer 28 of a first material, such as a siliciding metal, is formed over the base electrode 18 as well as the adjacent insulating region. A self-aligned capacitor electrode 12 can then be formed by reacting the first material 28 with the base electrode 18 and removing unreacted portions of the first material 28 from the insulating region 26. The capacitor is then completed by forming a dielectric layer 16 over the self-aligned capacitor electrode 12 and a second capacitor electrode 14 over the dielectric layer 16.

公开(公告)号：US06294420B1

公开(公告)日：2001-09-25

申请号：US09014724

申请日：1998-01-28

申请人： Robert Tsu ,  Isamu Asano ,  Shinpei Iijima ,  William R. McKee

发明人： Robert Tsu ,  Isamu Asano ,  Shinpei Iijima ,  William R. McKee

IPC分类号： H01L218242

CPC分类号： H01L28/75 ,  H01L21/28518 ,  H01L21/76897 ,  H01L28/55 ,  H01L28/90

摘要： The present invention discloses a novel integrated circuit capacitor and a method of forming such a capacitor. The capacitor formation begins with a base electrode 18 adjacent an insulating region 26. This base electrode 18 can comprise either polysilicon or a metal. A layer 28 of a first material, such as a siliciding metal, is formed over the base electrode 18 as well as the adjacent insulating region. A self-aligned capacitor electrode 12 can then be formed by reacting the first material 28 with the base electrode 18 and removing unreacted portions of the first material 28 from the insulating region 26. The capacitor is then completed by forming a dielectric layer 16 over the self-aligned capacitor electrode 12 and a second capacitor electrode 14 over the dielectric layer 16.

摘要翻译： 本发明公开了一种新颖的集成电路电容器及其形成方法。 电容器形成从邻近绝缘区域26的基极18开始。该基极18可以包括多晶硅或金属。 诸如硅化金属的第一材料的层28形成在基极电极18上以及相邻的绝缘区域上。 然后可以通过使第一材料28与基底电极18反应并从绝缘区域26去除第一材料28的未反应部分来形成自对准电容器电极12.然后通过在电容器电极12上形成介电层16来完成电容器 自对准电容器电极12和在电介质层16上的第二电容器电极14。

公开(公告)号：US07071071B2

公开(公告)日：2006-07-04

申请号：US10801003

申请日：2004-03-16

申请人： Shinpei Iijima ,  Keiji Kuroki

发明人： Shinpei Iijima ,  Keiji Kuroki

IPC分类号： H01L21/8242

CPC分类号： H01L28/91 ,  H01L27/10852

摘要： A lower electrode of a capacitor element is formed by manufacturing a crown structure while using a first conducting material such as titanium nitride or the like excellent in mechanical strength as a base material and by forming a film of a second conducting material such as ruthenium or the like, which is comparatively difficult to be oxidized, on a surface of the crown structure. First, ruthenium is deposited on a surface of the crown structure by using a sputtering method. Thereafter, the ruthenium (sputtered ruthenium) placed in a peripheral region of the crown structure is removed by etching, and a film of ruthenium is further formed on a surface of the crown structure by using a CVD method while using the sputtered ruthenium as a seed layer.

摘要翻译： 电容器元件的下电极通过在使用作为基材的机械强度优异的第一导电材料（例如氮化钛等）并通过形成第二导电材料如钌或者 在冠状结构的表面上相当难以被氧化。 首先，使用溅射法将钌沉积在表冠结构的表面上。 此后，通过蚀刻去除放置在冠结构的周边区域中的钌（溅射钌），并且使用溅射钌作为种子，通过使用CVD法在冠结构的表面上进一步形成钌膜 层。

公开(公告)号：US20060086961A1

公开(公告)日：2006-04-27

申请号：US11253628

申请日：2005-10-20

申请人： Shinpei Iijima ,  Keiji Kuroki

发明人： Shinpei Iijima ,  Keiji Kuroki

IPC分类号： H01L27/108

CPC分类号： H01L28/84 ,  H01L27/10817 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/91

摘要： A capacitor formed in a deep-hole has a bottom electrode, a capacitor insulator film and a top electrode. The bottom electrode includes a sidewall conductive film formed on the sidewall of a top portion of the deep-hole, and an inner conductive film formed on the sidewall conductive film and the sidewall and bottom of the through-hole. The inner conductive film is in contact with the underlying contact plug.

摘要翻译： 形成在深孔中的电容器具有底部电极，电容器绝缘膜和顶部电极。 底部电极包括形成在深孔顶部的侧壁上的侧壁导电膜和形成在侧壁导电膜上的内部导电膜以及通孔的侧壁和底部。 内部导电膜与下面的接触插塞接触。

公开(公告)号：US07259058B2

公开(公告)日：2007-08-21

申请号：US10020314

申请日：2001-12-18

申请人： Yasuhiro Shimamoto ,  Masahiko Hiratani ,  Yuichi Matsui ,  Satoshi Yamamoto ,  Toshihide Nabatame ,  Toshio Ando ,  Hiroshi Sakuma ,  Shinpei Iijima

发明人： Yasuhiro Shimamoto ,  Masahiko Hiratani ,  Yuichi Matsui ,  Satoshi Yamamoto ,  Toshihide Nabatame ,  Toshio Ando ,  Hiroshi Sakuma ,  Shinpei Iijima

IPC分类号： H01L21/8242

CPC分类号： H01L28/60 ,  C23C16/18 ,  H01L21/28556 ,  H01L21/28568 ,  H01L28/55 ,  H01L28/91

摘要： A ruthenium electrode with a low amount of oxygen contamination and high thermal stability is formed by a chemical vapor deposition method. In the chemical vapor deposition method using an organoruthenium compound as a precursor, the introduction of an oxidation gas is limited to when the precursor is supplying, and the reaction is allowed to occur at a low oxygen partial pressure. Consequently, it is possible to form a ruthenium film with a low amount of oxygen contamination. Further, after formation of the ruthenium film, annealing at not less than the formation temperature is performed, thereby forming a ruthenium film with high thermal stability.

摘要翻译： 通过化学气相沉积法形成氧气污染少，热稳定性高的钌电极。 在使用有机钌化合物作为前体的化学气相沉积方法中，氧化气体的引入限于当前体供应时，并且允许反应在低氧分压下发生。 因此，可以形成氧含量低的钌膜。 此外，在形成钌膜之后，进行不低于形成温度的退火，由此形成热稳定性高的钌膜。