Invention Grant
- Patent Title: Ferroelectric capacitor hydrogen barriers and methods for fabricating the same
- Patent Title (中): 铁电电容器氢屏障及其制造方法
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Application No.: US11033224Application Date: 2005-01-11
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Publication No.: US07183602B2Publication Date: 2007-02-27
- Inventor: K. R. Udayakumar , Theodore S. Moise , Scott R. Summerfelt
- Applicant: K. R. Udayakumar , Theodore S. Moise , Scott R. Summerfelt
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; W. James Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94
Abstract:
Hydrogen barriers and fabrication methods are provided for protecting ferroelectric capacitors (CFE) from hydrogen diffusion in semiconductor devices (102), wherein nitrided aluminum oxide (N—AlOx) is formed over a ferroelectric capacitor (CFE), and one or more silicon nitride layers (112, 117) are formed over the nitrided aluminum oxide (N—AlOx). Hydrogen barriers are also provided in which an aluminum oxide (AlOx, N—AlOx) is formed over the ferroelectric capacitors (CFE), with two or more silicon nitride layers (112, 117) formed over the aluminum oxide (AlOx, N—AlOx), wherein the second silicon nitride layer (112) comprises a low silicon-hydrogen SiN material.
Public/Granted literature
- US20050205911A1 Ferroelectric capacitor hydrogen barriers and methods for fabricating the same Public/Granted day:2005-09-22
Information query
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