发明授权
- 专利标题： Method of rinsing and drying semiconductor substrates
- 专利标题（中）： 冲洗和干燥半导体衬底的方法
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申请号： US10796507申请日： 2004-03-09
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公开(公告)号： US07186299B2公开(公告)日： 2007-03-06
- 发明人: Ki Hwan Park , Jong Kook Song , Mo Hyun Cho , Sung-Ho Jo , Sun Jae Lee , Pyung Ho Lim , Dong Wook Cho
- 申请人： Ki Hwan Park , Jong Kook Song , Mo Hyun Cho , Sung-Ho Jo , Sun Jae Lee , Pyung Ho Lim , Dong Wook Cho
- 申请人地址： KR
- 专利权人： Samsung Electronics, Co., Ltd.
- 当前专利权人： Samsung Electronics, Co., Ltd.
- 当前专利权人地址： KR
- 代理机构： Mills & Onello LLP
- 优先权： KR10-2003-0075573 20031028
- 主分类号： B08B3/10
- IPC分类号： B08B3/10
摘要：
A method for cleaning and drying semiconductor wafers improves device yield by providing more advanced control of the ratio of drying fluid to cleaning fluid, for example the ratio of N2 vapor to IPA vapor. In addition, a quick drain process is employed to improve process throughput, and to further improve particle and watermark removal during the cleaning and drying steps.
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