Invention Grant
- Patent Title: Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
- Patent Title (中): 通过金属有机化学气相沉积制造非极性氮化铟镓薄膜，异质结构和器件
-
Application No.: US11123805Application Date: 2005-05-06
-
Publication No.: US07186302B2Publication Date: 2007-03-06
- Inventor: Arpan Chakraborty , Benjamin A. Haskell , Stacia Keller , James Stephen Speck , Steven P. Denbaars , Shuji Nakamura , Umesh Kumar Mishra
- Applicant: Arpan Chakraborty , Benjamin A. Haskell , Stacia Keller , James Stephen Speck , Steven P. Denbaars , Shuji Nakamura , Umesh Kumar Mishra
- Applicant Address: US CA Oakland JP Kawaguchi
- Assignee: The Regents of the University of California,The Agency of Industrial Science and Technology
- Current Assignee: The Regents of the University of California,The Agency of Industrial Science and Technology
- Current Assignee Address: US CA Oakland JP Kawaguchi
- Agency: Gates & Cooper LLP
- Main IPC: H01L29/04
- IPC: H01L29/04
Abstract:
A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes.
Public/Granted literature
Information query
IPC分类:
