发明授权
US07186943B2 MERIE plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
失效
MERIE等离子体反应器,其顶置RF电极通过电弧抑制调谐到等离子体
- 专利标题: MERIE plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
- 专利标题(中): MERIE等离子体反应器,其顶置RF电极通过电弧抑制调谐到等离子体
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申请号: US11105307申请日: 2005-04-12
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公开(公告)号: US07186943B2公开(公告)日: 2007-03-06
- 发明人: Daniel J. Hoffman , Yan Ye , Dan Katz , Douglas A. Buchberger, Jr. , Xiaoye Zhao , Kang-Lie Chiang , Robert B. Hagen , Matthew L. Miller
- 申请人: Daniel J. Hoffman , Yan Ye , Dan Katz , Douglas A. Buchberger, Jr. , Xiaoye Zhao , Kang-Lie Chiang , Robert B. Hagen , Matthew L. Miller
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Law Office of Robert M. Wallace
- 主分类号: B23K10/06
- IPC分类号: B23K10/06
摘要:
A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor support, the electrode comprising a portion of the chamber wall, an RF power generator for supplying power at a frequency of the generator to the overhead electrode and capable of maintaining a plasma within the chamber at a desired plasma ion density level. The overhead electrode has a capacitance such that the overhead electrode and the plasma formed in the chamber at the desired plasma ion density resonate together at an electrode-plasma resonant frequency, the frequency of the generator being at least near the electrode-plasma resonant frequency. The reactor further includes a set of MERIE magnets surrounding the plasma process area overlying the wafer surface that produce a slowly circulating magnetic field which stirs the plasma to improve plasma ion density distribution uniformity.