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    MERIE plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
    1.
    发明授权
    MERIE plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression 失效
    MERIE等离子体反应器，其顶置RF电极通过电弧抑制调谐到等离子体

    公开(公告)号：US07186943B2

    公开(公告)日：2007-03-06

    申请号：US11105307

    申请日：2005-04-12

    申请人： Daniel J. Hoffman ,  Yan Ye ,  Dan Katz ,  Douglas A. Buchberger, Jr. ,  Xiaoye Zhao ,  Kang-Lie Chiang ,  Robert B. Hagen ,  Matthew L. Miller

    发明人： Daniel J. Hoffman ,  Yan Ye ,  Dan Katz ,  Douglas A. Buchberger, Jr. ,  Xiaoye Zhao ,  Kang-Lie Chiang ,  Robert B. Hagen ,  Matthew L. Miller

    IPC分类号： B23K10/06

    CPC分类号： H01J37/3244 ,  H01J37/32082 ,  H01J37/32183 ,  H01J37/3266

    摘要： A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor support, the electrode comprising a portion of the chamber wall, an RF power generator for supplying power at a frequency of the generator to the overhead electrode and capable of maintaining a plasma within the chamber at a desired plasma ion density level. The overhead electrode has a capacitance such that the overhead electrode and the plasma formed in the chamber at the desired plasma ion density resonate together at an electrode-plasma resonant frequency, the frequency of the generator being at least near the electrode-plasma resonant frequency. The reactor further includes a set of MERIE magnets surrounding the plasma process area overlying the wafer surface that produce a slowly circulating magnetic field which stirs the plasma to improve plasma ion density distribution uniformity.

    摘要翻译： 一种用于处理半导体工件的等离子体反应器，包括具有室壁并具有用于保持半导体支撑件的工件支撑件的反应室，所述电极包括室壁的一部分，RF发电机，用于以 发电机到顶置电极并且能够将室内的等离子体保持在期望的等离子体离子密度水平。 顶置电极具有这样的电容，使得在期望的等离子体离子密度下在室中形成的顶置电极和等离子体以电极 - 等离子体共振频率共振，发电机的频率至少接近电极 - 等离子体共振频率。 反应器还包括围绕晶片表面的等离子体处理区域的一组MERIE磁体，其产生缓慢循环的磁场，其搅动等离子体以改善等离子体离子密度分布均匀性。

    Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
    4.
    发明授权
    Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression 有权
    Merie等离子体反应器，其具有用电弧抑制调谐到等离子体的架空RF电极

    公开(公告)号：US06894245B2

    公开(公告)日：2005-05-17

    申请号：US10007367

    申请日：2001-10-22

    申请人： Daniel J. Hoffman ,  Yan Ye ,  Dan Katz ,  Douglas A. Buchberger, Jr. ,  Xiaoye Zhao ,  Kang-Lie Chiang ,  Robert B. Hagen ,  Matthew L. Miller

    发明人： Daniel J. Hoffman ,  Yan Ye ,  Dan Katz ,  Douglas A. Buchberger, Jr. ,  Xiaoye Zhao ,  Kang-Lie Chiang ,  Robert B. Hagen ,  Matthew L. Miller

    IPC分类号： H05H1/46 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  B23K10/00

    CPC分类号： H01J37/3244 ,  H01J37/32082 ,  H01J37/32183 ,  H01J37/3266

    摘要： A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor support, the electrode comprising a portion of the chamber wall, an RF power generator for supplying power at a frequency of the generator to the overhead electrode and capable of maintaining a plasma within the chamber at a desired plasma ion density level. The overhead electrode has a capacitance such that the overhead electrode and the plasma formed in the chamber at the desired plasma ion density resonate together at an electrode-plasma resonant frequency, the frequency of the generator being at least near the electrode-plasma resonant frequency. The reactor further includes a set of MERIE magnets surrounding the plasma process area overlying the wafer surface that produce a slowly circulating magnetic field which stirs the plasma to improve plasma ion density distribution uniformity.

    摘要翻译： 一种用于处理半导体工件的等离子体反应器，包括具有室壁并具有用于保持半导体支撑件的工件支撑件的反应室，所述电极包括室壁的一部分，RF发电机，用于以 发电机到顶置电极并且能够将室内的等离子体保持在期望的等离子体离子密度水平。 顶置电极具有这样的电容，使得在期望的等离子体离子密度下在室中形成的顶置电极和等离子体以电极 - 等离子体共振频率共振，发电机的频率至少接近电极 - 等离子体共振频率。 反应器还包括围绕晶片表面的等离子体处理区域的一组MERIE磁体，其产生缓慢循环的磁场，其搅动等离子体以改善等离子体离子密度分布均匀性。

    Gas distribution plate electrode for a plasma receptor
    5.
    发明授权
    Gas distribution plate electrode for a plasma receptor 有权
    用于等离子体受体的气体分布板电极

    公开(公告)号：US06677712B2

    公开(公告)日：2004-01-13

    申请号：US10442386

    申请日：2003-05-20

    申请人： Dan Katz ,  Douglas A. Buchberger, Jr. ,  Yan Ye ,  Robert B. Hagen ,  Xiaoye Zhao ,  Ananda H. Kumar ,  Kang-Lie Chiang ,  Hamid Noorbakhsh ,  Shiang-Bau Wang

    发明人： Dan Katz ,  Douglas A. Buchberger, Jr. ,  Yan Ye ,  Robert B. Hagen ,  Xiaoye Zhao ,  Ananda H. Kumar ,  Kang-Lie Chiang ,  Hamid Noorbakhsh ,  Shiang-Bau Wang

    IPC分类号： H01J724

    CPC分类号： H01J37/3244

    摘要： The invention is embodied in a plasma reactor for processing a semiconductor wafer, the reactor having a gas distribution plate including a front plate in the chamber and a back plate on an external side of the front plate, the gas distribution plate comprising a gas manifold adjacent the back plate, the back and front plates bonded together and forming an assembly. The assembly includes an array of holes through the front plate and communicating with the chamber, at least one gas flow-controlling orifice through the back plate and communicating between the manifold and at least one of the holes, the orifice having a diameter that determines gas flow rate to the at least one hole. In addition, an array of pucks is at least generally congruent with the array of holes and disposed within respective ones of the holes to define annular gas passages for gas flow through the front plate into the chamber, each of the annular gas passages being non-aligned with the orifice.

    摘要翻译： 本发明体现在用于处理半导体晶片的等离子体反应器中，该反应器具有气体分配板，该气体分配板包括在该腔室中的前板和在前板的外侧上的后板，该气体分配板包括邻近的气体歧管 背板，后板和前板结合在一起并形成组件。 组件包括穿过前板并与腔室连通的孔阵列，至少一个通过后板的气体流量控制孔，并在歧管和至少一个孔之间连通，孔口具有确定气体的直径 至少一个孔的流速。 此外，一组圆盘至少大体上与孔阵列一致，并且设置在孔的相应孔内，以限定用于气体流过前板进入腔室的环形气体通道，每个环形气体通道是非限制性的， 与孔对齐。

    Gas distribution plate electrode for a plasma reactor
    6.
    发明授权
    Gas distribution plate electrode for a plasma reactor 有权
    用于等离子体反应器的气体分布板电极

    公开(公告)号：US06586886B1

    公开(公告)日：2003-07-01

    申请号：US10027732

    申请日：2001-12-19

    申请人： Dan Katz ,  Douglas A. Buchberger, Jr. ,  Yan Ye ,  Robert B. Hagen ,  Xiaoye Zhao ,  Ananda H. Kumar ,  Kang-Lie Chiang ,  Hamid Noorbakhsh ,  Shiang-Bau Wang

    发明人： Dan Katz ,  Douglas A. Buchberger, Jr. ,  Yan Ye ,  Robert B. Hagen ,  Xiaoye Zhao ,  Ananda H. Kumar ,  Kang-Lie Chiang ,  Hamid Noorbakhsh ,  Shiang-Bau Wang

    IPC分类号： H01J724

    CPC分类号： H01J37/3244

    摘要： The invention is embodied in a plasma reactor for processing a semiconductor wafer, the reactor having a gas distribution plate including a front plate in the chamber and a back plate on an external side of the front plate, the gas distribution plate comprising a gas manifold adjacent the back plate, the back and front plates bonded together and forming an assembly. The assembly includes an array of holes through the front plate and communicating with the chamber, at least one gas flow-controlling orifice through the back plate and communicating between the manifold and at least one of the holes, the orifice having a diameter that determines gas flow rate to the at least one hole. In addition, an array of pucks is at least generally congruent with the array of holes and disposed within respective ones of the holes to define annular gas passages for gas flow through the front plate into the chamber, each of the annular gas passages being non-aligned with the orifice.

    摘要翻译： 本发明体现在用于处理半导体晶片的等离子体反应器中，该反应器具有气体分配板，该气体分配板包括在该腔室中的前板和在前板的外侧上的后板，该气体分配板包括邻近的气体歧管 背板，后板和前板结合在一起并形成组件。 组件包括穿过前板并与腔室连通的孔阵列，至少一个通过后板的气体流量控制孔，并在歧管和至少一个孔之间连通，孔口具有确定气体的直径 至少一个孔的流速。 此外，一组圆盘至少大体上与孔阵列一致，并且设置在孔的相应孔内，以限定用于气体流过前板进入腔室的环形气体通道，每个环形气体通道是非限制性的， 与孔对齐。

    Plasma etch process with separately fed carbon-lean and carbon-rich polymerizing etch gases in independent inner and outer gas injection zones
    9.
    发明授权
    Plasma etch process with separately fed carbon-lean and carbon-rich polymerizing etch gases in independent inner and outer gas injection zones 有权
    在独立的内部和外部气体注入区域中分别进料碳贫和富碳聚合蚀刻气体的等离子体蚀刻工艺

    公开(公告)号：US07541292B2

    公开(公告)日：2009-06-02

    申请号：US11414027

    申请日：2006-04-28

    申请人： Kallol Bera ,  Xiaoye Zhao ,  Kenny L. Doan ,  Ezra Robert Gold ,  Paul Lukas Brillhart ,  Bruno Geoffrion ,  Bryan Pu ,  Daniel J. Hoffman

    发明人： Kallol Bera ,  Xiaoye Zhao ,  Kenny L. Doan ,  Ezra Robert Gold ,  Paul Lukas Brillhart ,  Bruno Geoffrion ,  Bryan Pu ,  Daniel J. Hoffman

    IPC分类号： H01L21/461

    CPC分类号： H01L21/76802 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/3266 ,  H01J37/32706 ,  H01J2237/3347 ,  H01L21/31116

    摘要： A plasma etch process for etching high aspect ratio openings in a dielectric film on a workpiece is carried out in a reactor having a ceiling electrode overlying the workpiece and an electrostatic chuck supporting the workpiece. The process includes injecting a first polymerizing etch process gas through a radially inward one of plural concentric gas injection zones in the ceiling electrode and injecting a second polymerizing etch process gas through a radially outward one of the plural concentric gas injection zones in the ceiling electrode, the compositions of the first and second process gases having first and second carbon-to-fluorine ratios that differ from one another. The process further includes evacuating gas from the reactor through a pumping annulus surrounding an edge of the workpiece, and etching the high aspect ratio openings in the dielectric film with etch species derived from the etch process gas while depositing a polymer derived from the etch process gas onto the workpiece, by generating a plasma in the reactor.

    摘要翻译： 用于蚀刻工件上的电介质膜中的高纵横比开口的等离子体蚀刻工艺在具有覆盖工件的顶部电极的反应器和支撑工件的静电卡盘上进行。 该方法包括将第一聚合蚀刻工艺气体通过天花板电极中的多个同心气体注入区的径向向内的一个注入，并且通过天花板电极中的多个同心气体注入区中的径向向外的一个喷射第二聚合蚀刻工艺气体， 第一和第二工艺气体的组成具有彼此不同的第一和第二碳 - 氟比率。 该方法还包括通过围绕工件边缘的泵送环空将气体从反应器排出，以及用蚀刻工艺气体衍生的蚀刻物质蚀刻电介质膜中的高纵横比开口，同时沉积衍生自蚀刻工艺气体的聚合物 通过在反应器中产生等离子体而在工件上。

    Methods to avoid unstable plasma states during a process transition
    10.
    发明授权
    Methods to avoid unstable plasma states during a process transition 失效
    在过程转换过程中避免不稳定的等离子体状态的方法

    公开(公告)号：US08048806B2

    公开(公告)日：2011-11-01

    申请号：US11372752

    申请日：2006-03-10

    申请人： Michael C. Kutney ,  Daniel J. Hoffman ,  Gerardo A. Delgadino ,  Ezra R. Gold ,  Ashok Sinha ,  Xiaoye Zhao ,  Douglas H. Burns ,  Shawming Ma

    发明人： Michael C. Kutney ,  Daniel J. Hoffman ,  Gerardo A. Delgadino ,  Ezra R. Gold ,  Ashok Sinha ,  Xiaoye Zhao ,  Douglas H. Burns ,  Shawming Ma

    IPC分类号： H01L21/00 ,  H01L21/302 ,  G01L21/30

    CPC分类号： H01L21/67069 ,  H01L21/31116 ,  H01L21/76807

    摘要： In some implementations, a method is provided in a plasma processing chamber for stabilizing etch-rate distributions during a process transition from one process step to another process step. The method includes performing a pre-transition compensation of at least one other process parameter so as to avoid unstable plasma states by inhibiting formation of a parasitic plasma during the process transition. In some implementations, a method is provided for processing a workpiece in plasma processing chamber, which includes inhibiting deviations from an expected etch-rate distribution by avoiding unstable plasma states during a process transition from one process step to another process step.

    摘要翻译： 在一些实施方案中，在等离子体处理室中提供了一种方法，用于在从一个处理步骤到另一个处理步骤的过程转变期间稳定蚀刻速率分布。 该方法包括执行至少一个其它过程参数的预过渡补偿，以便通过在过程转换期间抑制寄生等离子体的形成来避免不稳定的等离子体状态。 在一些实施方案中，提供了一种用于处理等离子体处理室中的工件的方法，其包括通过在从一个工艺步骤转换到另一工艺步骤的过程转变期间避免不稳定的等离子体状态来抑制预期蚀刻速率分布的偏差。