发明授权
US07187080B2 Semiconductor device with a conductive layer including a copper layer with a dopant
有权
具有包括具有掺杂剂的铜层的导电层的半导体器件
- 专利标题： Semiconductor device with a conductive layer including a copper layer with a dopant
- 专利标题（中）： 具有包括具有掺杂剂的铜层的导电层的半导体器件
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申请号： US10964963申请日： 2004-10-14
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公开(公告)号： US07187080B2公开(公告)日： 2007-03-06
- 发明人: Qing-Tang Jiang , Changming Jin , Joseph D. Luttmer
- 申请人： Qing-Tang Jiang , Changming Jin , Joseph D. Luttmer
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 W. James Brady; Frederick J. Telecky, Jr.
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
A method of manufacturing a semiconductor device includes the steps of providing a semiconductor substrate (202), forming a dielectric layer (204) over the semiconductor substrate (202), and etching a trench or a via (206) in the dielectric layer (204) to expose a portion of the surface of the semiconductor substrate (202). The method also includes the step of forming a conductive layer (212, 220) within in the trench or the via (206). The method further includes the steps of polishing a portion of the conductive layer (220) and annealing the conductive layer (212, 220) at a predetermined temperature. Moreover, the conductive layer (212, 220) also includes a dopant, and the dopant diffuses substantially to the surface of the top side of the conductive layer (212, 220) to form a dopant oxide layer (212a, 220a) when the conductive layer (212, 220) is annealed at the predetermined temperature and the dopant is exposed to oxygen.