Invention Grant
- Patent Title: Reduction of a feature dimension in a nano-scale device
- Patent Title (中): 降低纳米尺度装置中的特征尺寸
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Application No.: US10943559Application Date: 2004-09-17
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Publication No.: US07189635B2Publication Date: 2007-03-13
- Inventor: Shashank Sharma
- Applicant: Shashank Sharma
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: H01L21/20
- IPC: H01L21/20

Abstract:
Nano-scale devices and methods provide reduced feature dimensions of features on the devices. A surface of a device substrate having a pattern of spaced apart first nanowires is consumed, such that a dimension of the first nanowires is reduced. A second nanowire is formed in a trench or gap between adjacent ones of the first nanowires, such that the nano-scale device includes a set of features that includes the first nanowires with the reduced dimension and the second nanowire spaced from the adjacent first nanowires by sub-trenches.
Public/Granted literature
- US20060063368A1 Reduction of a feature dimension in a nano-scale device Public/Granted day:2006-03-23
Information query
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