公开(公告)号：US07609432B2

公开(公告)日：2009-10-27

申请号：US11549283

申请日：2006-10-13

Applicant: Theodore I. Kamins ,  Wei Wu ,  Shih-Yuan Wang ,  Shashank Sharma

Inventor： Theodore I. Kamins ,  Wei Wu ,  Shih-Yuan Wang ,  Shashank Sharma

IPC: G02B26/12

CPC classification number: B81B3/0021 ,  B82Y15/00 ,  Y10S977/724 ,  Y10S977/762

Abstract: A nanoelectromechanical (NEM) device and a method of making same employ a laterally extending nanowire. The nanowire is grown in place from a vertical side of a vertically extending support block that is provided on a horizontal surface of a substrate. The nanowire is spaced from the horizontal surface. The NEM device includes a component that is provided to influence the nanowire.

Abstract translation: 纳米机电（NEM）器件及其制造方法采用横向延伸的纳米线。 纳米线从设置在基板的水平表面上的垂直延伸的支撑块的垂直侧生长就位。 纳米线与水平面间隔开。 NEM装置包括提供以影响纳米线的组件。

公开(公告)号：US07544591B2

公开(公告)日：2009-06-09

申请号：US11624682

申请日：2007-01-18

Applicant: Shashank Sharma ,  Theodore I Kamins

Inventor： Shashank Sharma ,  Theodore I Kamins

IPC: H01L21/20 ,  H01L21/36

CPC classification number: H01L29/045 ,  A01H5/10 ,  B81C1/00095 ,  B82Y10/00 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02521 ,  H01L21/02603 ,  H01L21/02609 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02647 ,  H01L21/02653 ,  H01L21/28525 ,  H01L21/76838 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of creating isolated electrodes and integrating a nanowire therebetween each employ lateral epitaxial overgrowth of a semiconductor material on a semiconductor layer to form isolated electrodes having the same crystal orientation. The methods include selective epitaxial growth of a semiconductor feature through a window in an insulating film on the semiconductor layer. A vertical stem is in contact with the semiconductor layer through the window and a ledge is a lateral epitaxial overgrowth of the vertical stem on the insulating film. The methods further include creating a pair of isolated electrodes from the semiconductor feature and the semiconductor layer. A nanowire-based device includes the pair of isolated electrodes and a nanowire bridging between respective surfaces of the isolated electrodes of the pair.

Abstract translation: 产生隔离电极并在其间集成纳米线的方法在半导体层上采用半导体材料的横向外延生长以形成具有相同晶体取向的隔离电极。 所述方法包括通过半导体层上的绝缘膜中的窗口选择性地外延生长半导体特征。 垂直杆通过窗口与半导体层接触，并且凸缘是绝缘膜上垂直杆的横向外延过度生长。 所述方法还包括从半导体特征和半导体层形成一对隔离电极。 基于纳米线的器件包括一对隔离电极和在该对的隔离电极的各个表面之间桥接的纳米线。

公开(公告)号：US20080088899A1

公开(公告)日：2008-04-17

申请号：US11549283

申请日：2006-10-13

Applicant: Theodore I. Kamins ,  Wei Wu ,  Shih-Yuan Wang ,  Shashank Sharma

Inventor： Theodore I. Kamins ,  Wei Wu ,  Shih-Yuan Wang ,  Shashank Sharma

IPC: G02B26/08

CPC classification number: B81B3/0021 ,  B82Y15/00 ,  Y10S977/724 ,  Y10S977/762

Abstract: A nanoelectromechanical (NEM) device and a method of making same employ a laterally extending nanowire. The nanowire is grown in place from a vertical side of a vertically extending support block that is provided on a horizontal surface of a substrate. The nanowire is spaced from the horizontal surface. The NEM device includes a component that is provided to influence the nanowire.

Abstract translation: 纳米机电（NEM）器件及其制造方法采用横向延伸的纳米线。 纳米线从设置在基板的水平表面上的垂直延伸的支撑块的垂直侧生长就位。 纳米线与水平面间隔开。 NEM装置包括提供以影响纳米线的组件。

公开(公告)号：US20080081388A1

公开(公告)日：2008-04-03

申请号：US11537589

申请日：2006-09-29

Applicant: Amir A. Yasseri ,  Theodore I. Kamins ,  Shashank Sharma

Inventor： Amir A. Yasseri ,  Theodore I. Kamins ,  Shashank Sharma

IPC: H01L21/00

CPC classification number: B82Y40/00 ,  B82Y10/00 ,  B82Y20/00 ,  G01N21/658 ,  H01L29/0676 ,  Y10S977/857

Abstract: A metal is deposited onto a surface electrochemically using a deposition solution including a metal salt. In making a composite nanostructure, the solution further includes an enhancer that promotes electrochemical deposition of the metal on the nanostructure. In a method of forming catalyzing nanoparticles, the metal preferentially deposits on a selected location of a surface that is exposed through a mask layer instead of on unexposed surfaces. A composite nanostructure apparatus includes an array of nanowires and the metal deposited on at least some nanowire surfaces. Some of the nanowires are heterogeneous, branched and include different adjacent axial segments with controlled axial lengths. In some deposition solutions, the enhancer one or both of controls oxide formation on the surface and causes metal nanocrystal formation. The deposition solution further includes a solvent that carries the metal salt and the enhancer.

Abstract translation: 使用包含金属盐的沉积溶液电化学地将金属沉积在表面上。 在制备复合纳米结构时，溶液还包括促进金属在纳米结构上的电化学沉积的增强剂。 在形成催化纳米颗粒的方法中，金属优先沉积在通过掩模层而不是未暴露的表面暴露的表面的选定位置。 复合纳米结构设备包括纳米线阵列和沉积在至少一些纳米线表面上的金属。 一些纳米线是异质的，分支的并且包括具有受控轴向长度的不同的相邻轴向段。 在一些沉积溶液中，增强剂中的一个或两个控制表面上的氧化物形成并引起金属纳米晶体的形成。 沉积溶液还包括携带金属盐和增强剂的溶剂。

公开(公告)号：US20070290370A1

公开(公告)日：2007-12-20

申请号：US11454446

申请日：2006-06-16

Applicant: Shashank Sharma ,  Theodore I. Kamins

Inventor： Shashank Sharma ,  Theodore I. Kamins

IPC: H01L23/52 ,  H01L21/36

CPC classification number: H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/861 ,  Y10S977/72 ,  Y10S977/762

Abstract: A device configured to have a nanowire formed laterally between two electrodes includes a substrate and an insulator layer established on at least a portion of the substrate. An electrode of a first conductivity type and an electrode of a second conductivity type different than the first conductivity type are established at least on the insulator layer. The electrodes are electrically isolated from each other. The electrode of the first conductivity type has a vertical sidewall that faces a vertical sidewall of the electrode of the second conductivity type, whereby a gap is located between the two vertical sidewalls. Methods are also disclosed for forming the device.

Abstract translation: 被配置为具有在两个电极之间横向形成的纳米线的器件包括衬底和建立在衬底的至少一部分上的绝缘体层。 至少在绝缘体层上形成第一导电类型的电极和不同于第一导电类型的第二导电类型的电极。 电极彼此电隔离。 第一导电类型的电极具有面向第二导电类型的电极的垂直侧壁的垂直侧壁，由此间隙位于两个垂直侧壁之间。 还公开了用于形成装置的方法。

公开(公告)号：US20070228523A1

公开(公告)日：2007-10-04

申请号：US11710314

申请日：2007-02-23

Applicant: Shashank Sharma

Inventor： Shashank Sharma

IPC: H01L29/41

CPC classification number: G03F7/0002 ,  B81C99/009 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y40/00 ,  Y10T428/31612

Abstract: Nano-scale devices and methods provide reduced feature dimensions of features on the devices. A surface of a device substrate having a pattern of spaced apart first nanowires is consumed, such that a dimension of the first nanowires is reduced. A second nanowire is formed in a trench or gap between adjacent ones of the first nanowires, such that the nano-scale device includes a set of features that includes the first nanowires with the reduced dimension and the second nanowire spaced from the adjacent first nanowires by sub-trenches.

公开(公告)号：US07189635B2

公开(公告)日：2007-03-13

申请号：US10943559

申请日：2004-09-17

Applicant: Shashank Sharma

Inventor： Shashank Sharma

IPC: H01L21/20

CPC classification number: G03F7/0002 ,  B81C99/009 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y40/00 ,  Y10T428/31612

Abstract: Nano-scale devices and methods provide reduced feature dimensions of features on the devices. A surface of a device substrate having a pattern of spaced apart first nanowires is consumed, such that a dimension of the first nanowires is reduced. A second nanowire is formed in a trench or gap between adjacent ones of the first nanowires, such that the nano-scale device includes a set of features that includes the first nanowires with the reduced dimension and the second nanowire spaced from the adjacent first nanowires by sub-trenches.

Abstract translation: 纳米级设备和方法可以减少设备上特征的特征尺寸。 具有间隔开的第一纳米线的图案的器件衬底的表面被消耗，使得第一纳米线的尺寸减小。 第二纳米线形成在相邻的第一纳米线之间的沟槽或间隙中，使得纳米级器件包括一组特征，其包括具有减小的尺寸的第一纳米线，并且第二纳米线与相邻的第一纳米线间隔开，第二纳米线通过 小壕沟

公开(公告)号：US20050133476A1

公开(公告)日：2005-06-23

申请号：US10738176

申请日：2003-12-17

Applicant: M. Islam ,  Theodore Kamins ,  Shashank Sharma

Inventor： M. Islam ,  Theodore Kamins ,  Shashank Sharma

IPC: D01F9/127 ,  H01L21/768 ,  H01L23/532 ,  H01L51/30 ,  C23F1/00

CPC classification number: G11C13/025 ,  B82Y10/00 ,  B82Y30/00 ,  G11C2213/16 ,  G11C2213/17 ,  H01L21/76838 ,  H01L23/53271 ,  H01L2221/1094 ,  H01L2924/0002 ,  Y10S977/721 ,  Y10S977/742 ,  H01L2924/00

Abstract: A semiconductor nanowire is grown laterally. A method of growing the nanowire forms a vertical surface on a substrate, and activates the vertical surface with a nanoparticle catalyst. A method of laterally bridging the nanowire grows the nanowire from the activated vertical surface to connect to an opposite vertical surface on the substrate. A method of connecting electrodes of a semiconductor device grows the nanowire from an activated device electrode to an opposing device electrode. A method of bridging semiconductor nanowires grows nanowires between an electrode pair in opposing lateral directions. A method of self-assembling the nanowire bridges the nanowire between an activated electrode pair. A method of controlling nanowire growth forms a surface irregularity in the vertical surface. An electronic device includes a laterally grown nano-scale interconnection.

Abstract translation: 半导体纳米线横向生长。 生长纳米线的方法在衬底上形成垂直表面，并用纳米颗粒催化剂激活垂直表面。 横向桥接纳米线的方法从激活的垂直表面生长纳米线，以连接到衬底上的相对的垂直表面。 连接半导体器件的电极的方法将纳米线从激活的器件电极生长到相对的器件电极。 桥接半导体纳米线的方法在相对的横向方向上的电极对之间生长纳米线。 自组装纳米线的方法在激活的电极对之间桥接纳米线。 控制纳米线生长的方法在垂直表面形成表面不规则性。 电子设备包括横向生长的纳米级互连。

公开(公告)号：US20120192789A1

公开(公告)日：2012-08-02

申请号：US13341965

申请日：2011-12-31

Applicant: Karl-Josef Kramer ,  Mehrdad M. Moslehi ,  Seiichi Yokoi ,  George D. Kamian ,  Shashank Sharma ,  Jay Ashjaee

Inventor： Karl-Josef Kramer ,  Mehrdad M. Moslehi ,  Seiichi Yokoi ,  George D. Kamian ,  Shashank Sharma ,  Jay Ashjaee

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/52

CPC classification number: C23C16/45502 ,  C23C16/4412 ,  C23C16/45517 ,  C23C16/4582 ,  C23C16/4583 ,  C23C16/4587 ,  C23C16/481 ,  C30B25/12 ,  C30B25/14 ,  C30B29/06

Abstract: This disclosure enables gas recovery and utilization for use in deposition systems and processes. The system includes a thin-film semiconductor layer deposition system comprising a deposition reactor, precursor gas feeds, and a gas recovery system.

Abstract translation: 该公开使得能够用于沉积系统和工艺中的气体回收和利用。 该系统包括薄膜半导体层沉积系统，其包括沉积反应器，前体气体进料和气体回收系统。

公开(公告)号：US08154127B1

公开(公告)日：2012-04-10

申请号：US11829995

申请日：2007-07-30

Applicant: Theodore I. Kamins ,  Alexandre M. Bratkovski ,  Shashank Sharma

Inventor： Theodore I. Kamins ,  Alexandre M. Bratkovski ,  Shashank Sharma

IPC: H01L23/48

CPC classification number: H01L23/48 ,  B82Y10/00 ,  B82Y40/00 ,  G02F1/015 ,  G02F2/02 ,  H01L29/0673 ,  H01L29/068 ,  H01L33/06 ,  H01L33/18 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An optical device includes a first electrode of a first conductivity type, and a second electrode of a second conductivity type. A nanowire is positioned between the first and second electrodes. The nanowire has at least two segments and a junction region formed between the at least two segments. One of the segments is the first conductivity type and the other of the segments is the second conductivity type. At least one of the at least two segments has a predetermined characteristic that affects optical behavior of the junction region.

Abstract translation: 光学装置包括第一导电类型的第一电极和第二导电类型的第二电极。 纳米线位于第一和第二电极之间。 纳米线具有至少两个区段和形成在该至少两个区段之间的连接区域。 其中一个段是第一导电类型，另一段是第二导电类型。 至少两个片段中的至少一个具有影响结区域的光学行为的预定特性。