Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
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Application No.: US10812880Application Date: 2004-03-31
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Publication No.: US07190045B2Publication Date: 2007-03-13
- Inventor: Kyoko Egashira , Shin Hashimoto
- Applicant: Kyoko Egashira , Shin Hashimoto
- Applicant Address: JP Osaka
- Assignee: Matsushita Electric Industrial Co., Ltd.
- Current Assignee: Matsushita Electric Industrial Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2003-094213 20030331
- Main IPC: H01L29/00
- IPC: H01L29/00

Abstract:
A semiconductor device is composed of: an interconnect made of a first conductive film and a second conductive film that are stacked in sequence from the interconnect underside on an insulating film formed on a substrate; and a capacitor composed of a lower capacitor electrode made of the first conductive film, a dielectric film formed on the lower capacitor electrode, and an upper capacitor electrode made of the second conductive film and formed on the dielectric film.
Public/Granted literature
- US20040253783A1 Semiconductor device and method for fabricating the same Public/Granted day:2004-12-16
Information query
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