公开(公告)号：US08415180B2

公开(公告)日：2013-04-09

申请号：US13318039

申请日：2010-03-01

Applicant: Shin Hashimoto ,  Katsushi Akita ,  Kensaku Motoki ,  Shinsuke Fujiwara ,  Hideaki Nakahata

Inventor： Shin Hashimoto ,  Katsushi Akita ,  Kensaku Motoki ,  Shinsuke Fujiwara ,  Hideaki Nakahata

IPC: H01L21/00

CPC classification number: C23C16/0227 ,  C23C16/0272 ,  C23C16/303 ,  C30B25/183 ,  C30B29/406 ,  H01L33/007

Abstract: Provided is a method for fabricating a wafer product including an active layer grown on a gallium oxide substrate and allowing an improvement in emission intensity. In step S105, a buffer layer 13 comprised of a Group III nitride such as GaN, AlGaN, or AlN is grown at 600 Celsius degrees on a primary surface 11a of a gallium oxide substrate 11. After the growth of the buffer layer 13, while supplying a gas G2, which contains hydrogen and nitrogen, into a growth reactor 10, the gallium oxide substrate 11 and the buffer layer 13 are exposed to an atmosphere in the growth reactor 11 at 1050 Celsius degrees. A Group III nitride semiconductor layer 15 is grown on the modified buffer layer. The modified buffer layer includes, for example, voids. The Group III nitride semiconductor layer 15 can be comprised of GaN and AlGaN. When the Group III nitride semiconductor layer 15 is formed of these materials, excellent crystal quality is obtained on the modified buffer layer 14.

Abstract translation: 本发明提供一种制造晶片产品的方法，该晶片产品包括在氧化镓衬底上生长的有源层并且能够提高发光强度。 在步骤S105中，在氧化镓衬底11的主表面11a上以600摄氏度生长由诸如GaN，AlGaN或AlN的III族氮化物构成的缓冲层13.在缓冲层13生长之后，同时 将含有氢和氮的气体G2供给到生长反应器10中，将氧化镓衬底11和缓冲层13在生长反应器11中的气氛中以1050摄氏度暴露。 在改性缓冲层上生长III族氮化物半导体层15。 改性缓冲层包括例如空隙。 III族氮化物半导体层15可以由GaN和AlGaN构成。 当由这些材料形成III族氮化物半导体层15时，在改性缓冲层14上获得优异的晶体质量。

公开(公告)号：US08404571B2

公开(公告)日：2013-03-26

申请号：US13000835

申请日：2009-06-25

Applicant: Shin Hashimoto ,  Tatsuya Tanabe

Inventor： Shin Hashimoto ,  Tatsuya Tanabe

IPC: H01L21/02 ,  C23C16/30 ,  C30B25/02 ,  C30B29/40

CPC classification number: C23C16/303 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658

Abstract: Provided is a film deposition method capable of improving the crystal characteristic near an interface according to the lattice constant of a material that will constitute a thin film to be deposited. Specifically, a substrate is curved relative to the direction along one main surface on which the thin film is to be deposited, according to the lattice constant the material that will constitute the thin film to be deposited and the lattice constant of a material constituting the one main surface. The thin film is deposited on the one main surface of the substrate with the substrate curved.

Abstract translation: 提供一种能够根据构成要沉积的薄膜的材料的晶格常数来改善界面附近的晶体特性的成膜方法。 具体地，基板相对于沿着要沉积薄膜的一个主表面的方向弯曲，根据构成要沉积的薄膜的材料的晶格常数和构成该薄膜的材料的晶格常数 主表面。 薄膜沉积在基板的一个主表面上，基板弯曲。

公开(公告)号：US20120003770A1

公开(公告)日：2012-01-05

申请号：US13202419

申请日：2010-02-10

Applicant: Shin Hashimoto ,  Katsushi Akita ,  Kensaku Motoki ,  Hideaki Nakahata ,  Shinsuke Fujiwara

Inventor： Shin Hashimoto ,  Katsushi Akita ,  Kensaku Motoki ,  Hideaki Nakahata ,  Shinsuke Fujiwara

IPC: H01L21/20 ,  H01L33/32 ,  B82Y40/00

CPC classification number: H01L21/0262 ,  C30B25/02 ,  C30B29/16 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007

Abstract: A method for forming an epitaxial wafer is provided as one enabling growth of a gallium nitride based semiconductor with good crystal quality on a gallium oxide region. In step S107, an AlN buffer layer 13 is grown. In step S108, at a time t5, a source gas G1 containing hydrogen, trimethylaluminum, and ammonia, in addition to nitrogen, is supplied into a growth reactor 10 to grow the AlN buffer layer 13 on a primary surface 11a. The AlN buffer layer 13 is so called a low-temperature buffer layer. After a start of film formation of the buffer layer 13, in step S109 supply of hydrogen (H2) is started at a time t6. At the time t6, H2, N2, TMA, and NH3 are supplied into the growth reactor 10. A supply amount of hydrogen is increased between times t6 and t7, and at the time t7 the increase of hydrogen is terminated to supply a constant amount of hydrogen. At the time t7, H2, TMA, and NH3 are supplied into the growth reactor 10.

Abstract translation: 提供了一种用于形成外延晶片的方法，其可以在氧化镓区域上使得能够以良好的晶体质量生长氮化镓基半导体。 在步骤S107中，生长AlN缓冲层13。 在步骤S108中，在时刻t5，将除了氮以外的氢，三甲基铝和氨的原料气G1供给到生长反应器10中，以在主面11a上生长AlN缓冲层13。 AlN缓冲层13被称为低温缓冲层。 在开始形成缓冲层13之后，在步骤S109中，在时刻t6开始供给氢（H2）。 在时间t6，H2，N2，TMA和NH3被供应到生长反应器10中。在时间t6和t7之间，氢的供应量增加，而在时间t7，氢的增加被终止以提供恒定的量 的氢。 在时间t7，将H2，TMA和NH3供应到生长反应器10中。

公开(公告)号：US20110278647A1

公开(公告)日：2011-11-17

申请号：US13038071

申请日：2011-03-01

Applicant: Shin HASHIMOTO ,  Katsushi AKITA ,  Yoshiyuki YAMAMOTO ,  Masaaki KUZUHARA ,  Norimasa YAFUNE

Inventor： Shin HASHIMOTO ,  Katsushi AKITA ,  Yoshiyuki YAMAMOTO ,  Masaaki KUZUHARA ,  Norimasa YAFUNE

IPC: H01L29/778 ,  H01L21/20 ,  H01L21/335

CPC classification number: H01L29/66462 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/7787

Abstract: A III-nitride semiconductor electronic device comprises a semiconductor laminate provided on a primary surface of a substrate, a first electrode in contact with the semiconductor laminate, and a second electrode. The semiconductor laminate includes a channel layer and a barrier layer making a junction with the channel layer. The channel layer comprises first III-nitride semiconductor containing aluminum as a Group III constituent element, and the barrier layer comprises second III-nitride semiconductor containing aluminum as a Group III constituent element. The semiconductor laminate including first, second and third regions arranged along the primary surface, and the third region is located between the first region and the second region. The barrier layer includes first to third portions included in the first to third regions, respectively. A concentration of impurity in the first portion is the same as that of impurity in the second portion, and the first and second electrodes is provided on the first and second regions, respectively. The first electrode includes a drain electrode or a source electrode. An aluminum composition of the first III-nitride semiconductor is not less than 0.16, and a bandgap of the second III-nitride semiconductor being larger than that of the first III-nitride semiconductor.

Abstract translation: III族氮化物半导体电子器件包括设置在衬底的主表面上的半导体层叠体，与半导体层叠体接触的第一电极和第二电极。 半导体层叠体包括沟道层和与沟道层形成结的阻挡层。 沟道层包括含有铝作为III族构成元素的第一III族氮化物半导体，并且阻挡层包含含有铝作为III族构成元素的第二III族氮化物半导体。 包括沿主表面布置的第一，第二和第三区域以及第三区域的半导体层叠体位于第一区域和第二区域之间。 阻挡层包括分别包括在第一至第三区域中的第一至第三部分。 第一部分中的杂质浓度与第二部分中的杂质浓度相同，第一和第二电极分别设置在第一和第二区域上。 第一电极包括漏电极或源电极。 第一III族氮化物半导体的铝组成不小于0.16，并且第二III族氮化物半导体的带隙大于第一III族氮化物半导体的带隙。

公开(公告)号：US20110097880A1

公开(公告)日：2011-04-28

申请号：US13000835

申请日：2009-06-25

Applicant: Shin Hashimoto ,  Tatsuya Tanabe

Inventor： Shin Hashimoto ,  Tatsuya Tanabe

IPC: H01L21/20

CPC classification number: C23C16/303 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658

Abstract: Provided is a film deposition method capable of improving the crystal characteristic near an interface according to the lattice constant of a material that will constitute a thin film to be deposited. Specifically, a substrate is curved relative to the direction along one main surface on which the thin film is to be deposited, according to the lattice constant the material that will constitute the thin film to be deposited and the lattice constant of a material constituting the one main surface. The thin film is deposited on the one main surface of the substrate with the substrate curved.

Abstract translation: 提供一种能够根据构成要沉积的薄膜的材料的晶格常数来改善界面附近的晶体特性的成膜方法。 具体地，基板相对于沿着要沉积薄膜的一个主表面的方向弯曲，根据构成要沉积的薄膜的材料的晶格常数和构成该薄膜的材料的晶格常数 主表面。 薄膜沉积在基板的一个主表面上，基板弯曲。

公开(公告)号：US07848231B2

公开(公告)日：2010-12-07

申请号：US10585569

申请日：2005-10-25

Applicant: Kazuhiro Hayakawa ,  Satoru Yoshida ,  Makoto Fukuda ,  Nobuo Shigeta ,  Kazuhiko Ogawa ,  Shin Hashimoto

Inventor： Kazuhiro Hayakawa ,  Satoru Yoshida ,  Makoto Fukuda ,  Nobuo Shigeta ,  Kazuhiko Ogawa ,  Shin Hashimoto

IPC: G01R31/08 ,  G06F11/00 ,  H04L12/28 ,  H04L12/56 ,  H04J3/02

CPC classification number: H04L45/04 ,  H04L45/50 ,  H04L47/2441 ,  H04L69/14

Abstract: A packet communication network is connected between a first external network and a second external network. The packet communication network includes a classifier, a parallel network that includes a plurality of physically or logically independent networks, and a multiplexing router. The classifier classifies a packet input from the first external network to one of the networks in the parallel network. Each of the networks in the parallel network transmits the packet to the multiplexing router. The multiplexing router multiplexes a packet received from the networks in the parallel network and outputs the multiplexed packet to the second external network.

Abstract translation: 分组通信网络连接在第一外部网络和第二外部网络之间。 分组通信网络包括分类器，包括多个物理上或逻辑上独立的网络的并行网络，以及复用路由器。 分类器将从第一外部网络输入的分组分类到并行网络中的一个网络。 并行网络中的每个网络将分组发送到复用路由器。 复用路由器复用从并行网络中的网络接收到的分组，并将复用的分组输出到第二外部网络。

公开(公告)号：US07808077B2

公开(公告)日：2010-10-05

申请号：US12185578

申请日：2008-08-04

Applicant: Kyoko Egashira ,  Shin Hashimoto

Inventor： Kyoko Egashira ,  Shin Hashimoto

IPC: H01L29/00

CPC classification number: H01L28/60 ,  H01L21/76838 ,  H01L21/76895 ,  H01L23/5223 ,  H01L23/5228 ,  H01L27/0805 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device is composed of: an interconnect made of a first conductive film and a second conductive film that are stacked in sequence from the interconnect underside on an insulating film formed on a substrate; and a capacitor composed of a lower capacitor electrode made of the first conductive film, a dielectric film formed on the lower capacitor electrode, and an upper capacitor electrode made of the second conductive film and formed on the dielectric film.

Abstract translation: 半导体器件由以下部分构成：由第一导电膜和第二导电膜构成的互连，其从形成在基板上的绝缘膜上的互连下侧依次堆叠; 以及由第一导电膜制成的下部电容电极，形成在下部电容电极上的电介质膜和形成在该电介质膜上的由上述第二导电膜构成的上部电容电极构成的电容器。

公开(公告)号：US20100230687A1

公开(公告)日：2010-09-16

申请号：US12740770

申请日：2008-10-28

Applicant: Shin Hashimoto ,  Tatsuya Tanabe

Inventor： Shin Hashimoto ,  Tatsuya Tanabe

IPC: H01L29/205 ,  H01L29/80 ,  H01L29/20

CPC classification number: H01L29/205 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/7787 ,  H01L29/872

Abstract: In a group III nitride hetero junction transistor 11a, a second AlY1InY2Ga1-Y1-Y2N layer 15 forms a hetero junction 21 with a first AlX1InX2Ga1-X1-X2N layer 13a. A first electrode 17 forms a Schottky junction with the first AlX1InX2Ga1-X1-X2N layer 13a. The first AlX1InX2Ga1-X1-X2N layer 13a and the second AlY1InY2Ga1-Y1-Y2N layer 15 are provided over a substrate 23. The electrodes 17a, 18a, and 19a include a source electrode, a gate electrode, and a drain electrode, respectively. The carbon concentration NC13 in the first AlX1InX2Ga1-X1-X2N layer 13a is less than 1×1017 cm−3. The dislocation density D in the second AlY1InY2Ga1-Y1-Y2N layer 15 is 1×108 cm−2. The hetero junction 21 generates a two-dimensional electron gas layer 25. These provide a low-loss gallium nitride based electronic device.

Abstract translation: 在III族氮化物异质结晶体管11a中，第二AlY1InY2Ga1-Y1-Y2N层15与第一AlX1InX2Ga1-X1-X2N层13a形成异质结21。 第一电极17与第一AlX1InX2Ga1-X1-X2N层13a形成肖特基结。 第一AlX1InX2Ga1-X1-X2N层13a和第二AlY1InY2Ga1-Y1-Y2N层15设置在衬底23上。电极17a，18a和19a分别包括源电极，栅极电极和漏电极。 第一AlX1InX2Ga1-X1-X2N层13a中的碳浓度NC13小于1×1017cm-3。 第二AlY1InY2Ga1-Y1-Y2N层15中的位错密度D为1×108cm-2。 异质结21产生二维电子气体层25.这些提供了一种低损耗氮化镓基电子器件。

公开(公告)号：US20090147793A1

公开(公告)日：2009-06-11

申请号：US10585569

申请日：2005-10-25

Applicant: Kazuhiro Hayakawa ,  Satoru Yoshida ,  Makoto Fukuda ,  Nobuo Shigeta ,  Kazuhiko Ogawa ,  Shin Hashimoto

Inventor： Kazuhiro Hayakawa ,  Satoru Yoshida ,  Makoto Fukuda ,  Nobuo Shigeta ,  Kazuhiko Ogawa ,  Shin Hashimoto

IPC: H04L12/56

CPC classification number: H04L45/04 ,  H04L45/50 ,  H04L47/2441 ,  H04L69/14

Abstract: A packet communication network is connected between a first external network and a second external network. The packet communication network includes a classifier, a parallel network that includes a plurality of physically or logically independent networks, and a multiplexing router. The classifier classifies a packet input from the first external network to one of the networks in the parallel network. Each of the networks in the parallel network transmits the packet to the multiplexing router. The multiplexing router multiplexes a packet received from the networks in the parallel network and outputs the multiplexed packet to the second external network.

Abstract translation: 分组通信网络连接在第一外部网络和第二外部网络之间。 分组通信网络包括分类器，包括多个物理上或逻辑上独立的网络的并行网络，以及复用路由器。 分类器将从第一外部网络输入的分组分类到并行网络中的一个网络。 并行网络中的每个网络将分组发送到复用路由器。 复用路由器复用从并行网络中的网络接收到的分组，并将复用的分组输出到第二外部网络。

公开(公告)号：US20070242684A1

公开(公告)日：2007-10-18

申请号：US10589990

申请日：2005-10-25

Applicant: Kazuhiro Hayakawa ,  Satoru Yoshida ,  Makoto Fukuda ,  Nobuo Shigeta ,  Kazuhiko Ogawa ,  Shin Hashimoto

Inventor： Kazuhiro Hayakawa ,  Satoru Yoshida ,  Makoto Fukuda ,  Nobuo Shigeta ,  Kazuhiko Ogawa ,  Shin Hashimoto

IPC: H04L12/56

CPC classification number: H04J14/0227 ,  H04J14/0241 ,  H04J14/0284 ,  H04L12/56 ,  H04Q11/0062 ,  H04Q11/0066 ,  H04Q11/0071 ,  H04Q2011/0098

Abstract: Full-mesh WDM transmission units, each of which includes n number of interfaces and is capable of establishing a bidirectional full-mesh communication between all of the interfaces using wavelength paths based on a wavelength division multiplexing technique, are connected in a multistage tree-shaped structure by internetwork connection units through edge-packet transfer units connected to the respective interfaces. Therefore, it is possible to hold a direct communication between user terminals connected to the edge-packet transfer units of the same full-mesh WDM transmission unit, and to realize scalability by a multistage connection configuration.

Abstract translation: 全网WDM传输单元，其中每个包括n个接口，并且能够使用基于波分复用技术的波长路径在所有接口之间建立双向全网状通信，以多级树状 通过互连网络连接单元通过连接到相应接口的边缘分组传送单元进行结构化。 因此，可以在连接到同一全网WDM传输单元的边缘分组传送单元的用户终端之间进行直接通信，并且通过多级连接配置来实现可扩展性。