发明授权
- 专利标题: Method of manufacturing semiconductor device and display device
- 专利标题(中): 制造半导体器件和显示装置的方法
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申请号: US10845422申请日: 2004-05-13
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公开(公告)号: US07192859B2公开(公告)日: 2007-03-20
- 发明人: Shunpei Yamazaki , Toru Takayama , Tetsuji Yamaguchi
- 申请人: Shunpei Yamazaki , Toru Takayama , Tetsuji Yamaguchi
- 申请人地址: JP
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP
- 代理机构: Cook, Alex, McFarron, Manzo, Cummings & Mehler, Ltd.
- 优先权: JP2003-139680 20030516
- 主分类号: H01L21/44
- IPC分类号: H01L21/44
摘要:
To provide a method of forming a wiring for the purpose of providing a semiconductor device, which is superior in reliability and cost performance. Further, to provide methods of manufacturing a semiconductor device and a display device by using the method of forming the wiring according to the present invention. According to the present invention, when a wiring material and the like is directly patterned on a substrate mainly having an insulating surface by droplet discharging method, a wiring is formed at a position including at least an opening in contact with an underlying portion on an insulating film provided with the opening by dropping a liquid droplet containing a conductive composition by droplet discharging method. By heating the substrate with the wiring formed thereon, a surface of the wiring on the opening and a surface of the wiring other than the wiring on the opening are approximately leveled, and the opening is filled.
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