发明授权
US07192893B2 Use of linear injectors to deposit uniform selective ozone TEOS oxide film by pulsing reactants on and off
有权
使用线性注射器通过脉冲反应物打开和关闭来沉积均匀的选择性臭氧TEOS氧化物膜
- 专利标题： Use of linear injectors to deposit uniform selective ozone TEOS oxide film by pulsing reactants on and off
- 专利标题（中）： 使用线性注射器通过脉冲反应物打开和关闭来沉积均匀的选择性臭氧TEOS氧化物膜
-
申请号： US10634352申请日： 2003-08-05
-
公开(公告)号： US07192893B2公开(公告)日： 2007-03-20
- 发明人: William Budge , Gurtej S. Sandhu , Christopher W. Hill
- 申请人： William Budge , Gurtej S. Sandhu , Christopher W. Hill
- 申请人地址： US ID Boise
- 专利权人： Micron Technology Inc.
- 当前专利权人： Micron Technology Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Whyte Hirschboeck Dudek SC
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
A process for enhanced selective deposition of a silicon oxide onto a substrate by pulsing delivery of the reactants through a linear injector is disclosed. The silicon oxide layer is formed by the ozone decomposition of TEOS at relatively low temperatures and relatively high pressures. The ozone delivery is pulsed on and off. Optionally, the delivery of the ozone and the delivery of the TEOS are pulsed on and off alternately.