发明授权
- 专利标题： Flash memory device
- 专利标题（中）： 闪存设备
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申请号： US10614177申请日： 2003-07-08
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公开(公告)号： US07196372B1公开(公告)日： 2007-03-27
- 发明人: Bin Yu , Ming-Ren Lin , Srikanteswara Dakshina-Murthy , Zoran Krivokapic
- 申请人： Bin Yu , Ming-Ren Lin , Srikanteswara Dakshina-Murthy , Zoran Krivokapic
- 申请人地址： US CA Sunnyvale
- 专利权人： Spansion LLC
- 当前专利权人： Spansion LLC
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Harrity Snyder, LLP
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
A non-volatile memory device includes a substrate, an insulating layer, a fin, an oxide layer, spacers and one or more control gates. The insulating layer is formed on the substrate and the fin is formed on the insulating layer. The oxide layer is formed on the fin and acts as a tunnel oxide for the memory device. The spacers are formed adjacent the side surfaces of the fin and the control gates are formed adjacent the spacers. The spacers act as floating gate electrodes for the non-volatile memory device.
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