发明授权
US07196875B2 Permalloy sensor having individual permalloy resist pattern runners with lengths perpendicular to a wafer level anisotropy
有权
坡莫合金传感器具有各自的坡莫合金抗蚀剂图案流延器，其长度垂直于晶片级各向异性
- 专利标题： Permalloy sensor having individual permalloy resist pattern runners with lengths perpendicular to a wafer level anisotropy
- 专利标题（中）： 坡莫合金传感器具有各自的坡莫合金抗蚀剂图案流延器，其长度垂直于晶片级各向异性
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申请号： US10811473申请日： 2004-03-24
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公开(公告)号： US07196875B2公开(公告)日： 2007-03-27
- 发明人: Jason M Chilcote , Perry A. Holman
- 申请人： Jason M Chilcote , Perry A. Holman
- 申请人地址： US NJ Morristown
- 专利权人： Honeywell International Inc.
- 当前专利权人： Honeywell International Inc.
- 当前专利权人地址： US NJ Morristown
- 代理商 John S. Munday
- 主分类号： G11B5/39
- IPC分类号： G11B5/39 ; G11B5/33
摘要：
A permalloy sensor having high sensitivity is presented A substrate and a sensor has a first surface having a wafer level anisotropy in a given direction. A permalloy resistor pattern of individual runners is deposited on the surface such that the mechanical length of each of said individual runners is perpendicular to the wafer level anisotropy to cause the sensor to have an anisotropy of about 90°. The permalloy is deposited as a thin film and a silicon wafer is the preferred substrate.
公开/授权文献
- US20050213257A1 Permalloy sensor 公开/授权日：2005-09-29