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    Permalloy sensor having individual permalloy resist pattern runners with lengths perpendicular to a wafer level anisotropy
    1.
    发明授权
    Permalloy sensor having individual permalloy resist pattern runners with lengths perpendicular to a wafer level anisotropy 有权
    坡莫合金传感器具有各自的坡莫合金抗蚀剂图案流延器，其长度垂直于晶片级各向异性

    公开(公告)号：US07196875B2

    公开(公告)日：2007-03-27

    申请号：US10811473

    申请日：2004-03-24

    申请人： Jason M Chilcote ,  Perry A. Holman

    发明人： Jason M Chilcote ,  Perry A. Holman

    IPC分类号： G11B5/39 ,  G11B5/33

    CPC分类号： H01L43/08

    摘要： A permalloy sensor having high sensitivity is presented A substrate and a sensor has a first surface having a wafer level anisotropy in a given direction. A permalloy resistor pattern of individual runners is deposited on the surface such that the mechanical length of each of said individual runners is perpendicular to the wafer level anisotropy to cause the sensor to have an anisotropy of about 90°. The permalloy is deposited as a thin film and a silicon wafer is the preferred substrate.

    摘要翻译： 具有高灵敏度的坡莫合金传感器呈现基板和传感器具有在给定方向上具有晶片级各向异性的第一表面。 单个流道的坡莫合金电阻器图案沉积在表面上，使得每个所述单个流道的机械长度垂直于晶片级各向异性，以使传感器具有大约90°的各向异性。 坡莫合金作为薄膜沉积，硅晶片是优选的基板。