Invention Grant
- Patent Title: Magnetic memory structure using heater lines to assist in writing operations
- Patent Title (中): 磁记忆体结构采用加热线来协助书写作业
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Application No.: US11105054Application Date: 2005-04-13
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Publication No.: US07196957B2Publication Date: 2007-03-27
- Inventor: Lung Tran , Thomas C. Anthony
- Applicant: Lung Tran , Thomas C. Anthony
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: G11C7/04
- IPC: G11C7/04
Abstract:
The invention includes a stacked magnetic memory structure. The magnetic memory structure includes a stacked magnetic memory structure. The first layer includes a first plurality of magnetic tunnel junctions. A second layer is formed adjacent to the first layer. The second layer includes a second plurality of magnetic tunnel junctions. The stacked magnetic memory structure further includes a common first group conductor connected to each of the first plurality of magnetic tunnel junctions and the second plurality of magnetic tunnel junctions.
Public/Granted literature
- US20050185453A1 Stacked magnetic memory structure Public/Granted day:2005-08-25
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