发明授权
- 专利标题: Method of making a high impedance surface
- 专利标题(中): 制造高阻抗表面的方法
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申请号: US10728506申请日: 2003-12-05
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公开(公告)号: US07197800B2公开(公告)日: 2007-04-03
- 发明人: Daniel F. Sievenpiper , Joseph L. Pikulski , James H. Schaffner , Tsung-Yuan Hsu
- 申请人: Daniel F. Sievenpiper , Joseph L. Pikulski , James H. Schaffner , Tsung-Yuan Hsu
- 申请人地址: US CA Malibu
- 专利权人: HRL Laboratories, LLC
- 当前专利权人: HRL Laboratories, LLC
- 当前专利权人地址: US CA Malibu
- 代理机构: Ladas & Parry LLP
- 主分类号: H01G7/00
- IPC分类号: H01G7/00
摘要:
A high impedance surface and a method of making same. The surface includes a molded structure having a repeating pattern of holes therein and a repeating pattern of sidewall surfaces, the holes penetrating the structure between first and second major surfaces thereof and the sidewall surfaces joining the first major surface. A metal layer is put on said molded structure, the metal layer being in the holes, covering at least a portion of the second major surface, covering the sidewalls and portions of the first major surface to interconnect the sidewalls with other sidewalls via the metal layer on the second major surface and in the holes.
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