发明授权
- 专利标题： Strained finFETs and method of manufacture
- 专利标题（中）： 应变finFET和制造方法
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申请号： US10733378申请日： 2003-12-12
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公开(公告)号： US07198995B2公开(公告)日： 2007-04-03
- 发明人: Dureseti Chidambarrao , Omer H. Dokumaci , Oleg G. Gluschenkov
- 申请人： Dureseti Chidambarrao , Omer H. Dokumaci , Oleg G. Gluschenkov
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Greenblum & Bernstein, P.L.C.
- 代理商 Joseph P. Abate, Esq.
- 主分类号： H01L21/84
- IPC分类号： H01L21/84
摘要：
A semiconductor structure and method of manufacturing is provided. The method of manufacturing includes forming shallow trench isolation (STI) in a substrate and providing a first material and a second material on the substrate. The first material and the second material form a first island and second island at an pFET region and a nFET region, respectively. A tensile hard mask is formed on the first and the second island layer prior to forming finFETs. An Si epitaxial layer is grown on the sidewalls of the finFETs with the hard mask, now a capping layer which is under tension, preventing lateral buckling of the nFET fin.
公开/授权文献
- US20050130358A1 Strained finFETs and method of manufacture 公开/授权日：2005-06-16
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