- 专利标题： Methods and systems to mitigate etch stop clipping for shallow trench isolation fabrication
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申请号： US10874038申请日： 2004-06-22
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公开(公告)号： US07199021B2公开(公告)日： 2007-04-03
- 发明人: Manuel Quevedo-Lopez , James J. Chambers , Leif Christian Olsen
- 申请人： Manuel Quevedo-Lopez , James J. Chambers , Leif Christian Olsen
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Peter K. McLarty; W. James Brady, III; Frederick J. Telecky, Jr.
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L21/336
摘要：
The present invention facilitates semiconductor fabrication by maintaining shape and density of an etch stop layer (206) during trench fill operations. The shape and density of the etch stop layer (206) is maintained by forming a protective alloy liner layer (310) on the etch stop layer (206) prior to trench fill operations. The protective alloy liner (310) is comprised of an alloy that is resistant to materials employed in the trench fill operations. As a result, clipping and/or damage to the etch stop layer (206) is mitigated thereby facilitating a subsequent planarization process that employs the etch stop layer (206). Additionally, selection of thickness and composition (1706) of the formed protective alloy (310) yields a stress amount and type (1704) that is applied to channel regions of unformed transistor devices, ultimately providing for an improvement in channel mobility.
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