Invention Grant
- Patent Title: Method for reducing particles during ion implantation
- Patent Title (中): 离子注入期间减少颗粒的方法
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Application No.: US11161995Application Date: 2005-08-25
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Publication No.: US07199383B2Publication Date: 2007-04-03
- Inventor: Jui-Fang Chen , Cheng-Hung Chang , Chung-Shih Shen , Chung-Jung Chen
- Applicant: Jui-Fang Chen , Cheng-Hung Chang , Chung-Shih Shen , Chung-Jung Chen
- Applicant Address: TW Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01J37/317
- IPC: H01J37/317 ; H01J37/08 ; G21G5/00 ; A21N5/00

Abstract:
A method for reducing particles during ion implantation is provided. The method involves the use of an improved Faraday flag including a beam plate having thereon a beam striking zone comprising a recessed trench pattern on which the ion beam scans to and fro. An ion beam selected from the mass analyzer is blocked by the Faraday flag in a closed position between the mass analyzer and the semiconductor wafer. A beam current of the ion beam impinging on the beam striking zone of the beam plate is measured. After the beam current measurement, the Faraday flag is removed such that the ion beam impinges on the semiconductor wafer.
Public/Granted literature
- US20070045568A1 METHOD FOR REDUCING PARTICLES DURING ION IMPLANTATION Public/Granted day:2007-03-01
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