发明授权
US07199468B2 Hybrid integrated circuit device with high melting point brazing material
失效
具有高熔点钎焊材料的混合集成电路器件
- 专利标题： Hybrid integrated circuit device with high melting point brazing material
- 专利标题（中）： 具有高熔点钎焊材料的混合集成电路器件
-
申请号： US10813189申请日： 2004-03-29
-
公开(公告)号： US07199468B2公开(公告)日： 2007-04-03
- 发明人: Toshimichi Naruse , Nobuhisa Takakusaki , Hajime Kobayashi
- 申请人： Toshimichi Naruse , Nobuhisa Takakusaki , Hajime Kobayashi
- 申请人地址： JP Osaka
- 专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： Fish & Richardson P.C.
- 优先权： JP2003-188523 20030630
- 主分类号： H01L23/34
- IPC分类号： H01L23/34
摘要：
In order to prevent short-circuiting when a chip component is brazed to pads of a conductive wiring layer, a hybrid semiconductor circuit includes the chip component with terminal electrodes formed at both ends, a first conductive wiring layer on which the pads are provided such that they correspond to the terminal electrodes, and an overcoat resin that covers the first conductive wiring layer excluding the pads. The terminal electrodes of the chip component are adhered to the pads by a conductive adhesive and an insulating adhesive is provided between the pads.
公开/授权文献
- US20040262644A1 Hybrid integrated circuit device 公开/授权日：2004-12-30
信息查询
IPC分类:
