- 专利标题: Sense amplifier for semiconductor memory device
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申请号: US10534049申请日: 2002-11-08
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公开(公告)号: US07200061B2公开(公告)日: 2007-04-03
- 发明人: Tomonori Sekiguchi , Shinichi Miyatake , Takeshi Sakata , Riichiro Takemura , Hiromasa Noda , Kazuhiko Kajigaya
- 申请人: Tomonori Sekiguchi , Shinichi Miyatake , Takeshi Sakata , Riichiro Takemura , Hiromasa Noda , Kazuhiko Kajigaya
- 申请人地址: JP Tokyo JP Tokyo JP Tokyo
- 专利权人: Hitachi, Ltd.,Elpida Memory, Inc.,Hitachi ULSI Systems Co., Ltd.
- 当前专利权人: Hitachi, Ltd.,Elpida Memory, Inc.,Hitachi ULSI Systems Co., Ltd.
- 当前专利权人地址: JP Tokyo JP Tokyo JP Tokyo
- 国际申请: PCT/JP02/11659 WO 20021108
- 国际公布: WO2004/042821 WO 20040521
- 主分类号: G11C7/02
- IPC分类号: G11C7/02
摘要:
A direct sense amplifier of the present invention incorporates and isolates: an MOS transistor serving as a differential pair and having a gate connected to a bit line; and an MOS transistor controlled by a column select line wired between RLIO lines in a bit-line direction, and further connects a source of the MOS transistor serving as the differential pair to a common source line wired in the word-line direction. Since the direct sense amplifier only in a select map is activated by the column select line and the common source line during an read operation, power consumption is significantly reduced during the read operation. Also, since a parasitic capacitance of the MOS transistor serving as the differential pair is separated from the local IO line, a load capacity of the local IO line is reduced and the read operation is speeded up. In addition, during the read operation, a data pattern dependency of the load capacity of the local IO line is reduced and a post-manufacture test is easily made.
公开/授权文献
- US20060034133A1 Semiconductor memory 公开/授权日:2006-02-16
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