发明授权
US07202015B2 Positive photoresist composition and pattern making method using the same
有权
正光致抗蚀剂组合物和使用其的图案制造方法
- 专利标题: Positive photoresist composition and pattern making method using the same
- 专利标题(中): 正光致抗蚀剂组合物和使用其的图案制造方法
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申请号: US10921962申请日: 2004-08-20
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公开(公告)号: US07202015B2公开(公告)日: 2007-04-10
- 发明人: Shinichi Kanna , Kazuyoshi Mizutani , Tomoya Sasaki
- 申请人: Shinichi Kanna , Kazuyoshi Mizutani , Tomoya Sasaki
- 申请人地址: JP Kanagawa
- 专利权人: Fuji Photo Film Co., Ltd.
- 当前专利权人: Fuji Photo Film Co., Ltd.
- 当前专利权人地址: JP Kanagawa
- 代理机构: Sughrue Mion, PLLC
- 优先权: JPP2003-298897 20030822
- 主分类号: G03F7/004
- IPC分类号: G03F7/004 ; G03C5/00
摘要:
A positive photoresist composition containing: (A) a resin which contains at least one of a repeating unit represented by the formula (IA) defiend herein and a repeating unit represented by the formula (IB) defined herein, and is decomposed by an action of an acid and shows an increase in a solubility in an alkali developer; and (B) as compounds capable of generating an acid upon irradiation with one of an actinic ray and a radiation, at least two compounds selected from the compounds (B1), (B2), (B3) and (B4) as defiend herein.
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