发明授权
US07202187B2 Method of forming sidewall spacer using dual-frequency plasma enhanced CVD
失效
使用双频等离子体增强CVD形成侧壁间隔物的方法
- 专利标题： Method of forming sidewall spacer using dual-frequency plasma enhanced CVD
- 专利标题（中）： 使用双频等离子体增强CVD形成侧壁间隔物的方法
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申请号： US10710257申请日： 2004-06-29
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公开(公告)号： US07202187B2公开(公告)日： 2007-04-10
- 发明人: Ravikumar Ramachandran , James T. Kelliher , Shreesh Narasimha , Jeffrey W. Sleight
- 申请人： Ravikumar Ramachandran , James T. Kelliher , Shreesh Narasimha , Jeffrey W. Sleight
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Kerry B. Goodwin
- 主分类号： H01L21/469
- IPC分类号： H01L21/469 ; H01L21/31
摘要：
A silicon nitride spacer material for use in forming a PFET device and a method for making the spacer includes the use of a dual-frequency plasma enhanced CVD process wherein the temperature is in the range depositing a silicon nitride layer by means of a low-temperature dual-frequency plasma enhanced CVD process, at a temperature in the range 400° C. to 550° C. The process pressure is in the range 2 Torr to 5 Torr. The low frequency power is in the range 0 W to 50 W, and the high frequency power is in the range 90 W to 110 W. The precursor gases of silane, ammonia and nitrogen flow at flow rates in the ratio 240:3200:4000 sccm. The use of the silicon nitride spacer of the invention to form a PFET device having a dual spacer results in a 10%–15% performance improvement compared to a similar PFET device having a silicon nitride spacer formed by a RTCVD process.
公开/授权文献
- US20050287823A1 DUAL-FREQUENCY SILICON NITRIDE FOR SPACER APPLICATION 公开/授权日：2005-12-29