Invention Grant
US07204889B2 Method of reducing water spotting and oxide growth on a semiconductor structure
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减少半导体结构上的水斑和氧化物生长的方法
- Patent Title: Method of reducing water spotting and oxide growth on a semiconductor structure
- Patent Title (中): 减少半导体结构上的水斑和氧化物生长的方法
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Application No.: US10701383Application Date: 2003-11-04
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Publication No.: US07204889B2Publication Date: 2007-04-17
- Inventor: Donald L. Yates
- Applicant: Donald L. Yates
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: B08B7/04
- IPC: B08B7/04
Abstract:
The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel.
Public/Granted literature
- US20040139991A1 Method of reducing water spotting and oxide growth on a semiconductor structure Public/Granted day:2004-07-22
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