发明授权
- 专利标题： Micro-feature fill process and apparatus using hexachlorodisilane or other chlorine-containing silicon precursor
- 专利标题（中）： 微特征填充方法和使用六氯二硅烷或其他含氯硅前体的装置
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申请号： US11035730申请日： 2005-01-18
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公开(公告)号： US07205187B2公开(公告)日： 2007-04-17
- 发明人: Allen John Leith , Anthony Dip , Seungho Oh
- 申请人： Allen John Leith , Anthony Dip , Seungho Oh
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/8234
摘要：
A method is provided for depositing a silicon-containing film in a micro-feature on a substrate by a low pressure deposition process in a processing system. A silicon-containing film can be formed in a micro-feature by providing a substrate in a process chamber of a processing system, and exposing a hexachlorodisilane (HCD) process gas to the substrate. A processing tool containing a processing system for forming a silicon-containing film in a micro-feature using a silicon and chlorine-containing gas such as a HCD process gas is provided. Alternatively, the micro-feature can be exposed to DCS, SiCl4, and SiHCl3 gases. Alternatively, the micro-feature can be exposed to (SiH4+HCl).