Invention Grant
US07205609B2 Methods of forming semiconductor devices including fin structures and related devices
有权
形成包括鳍结构和相关器件的半导体器件的方法
- Patent Title: Methods of forming semiconductor devices including fin structures and related devices
- Patent Title (中): 形成包括鳍结构和相关器件的半导体器件的方法
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Application No.: US10853616Application Date: 2004-05-25
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Publication No.: US07205609B2Publication Date: 2007-04-17
- Inventor: Deok-Hyung Lee , Si-Young Choi , Byeong-Chan Lee , Yong-Hoon Son , In-Soo Jung
- Applicant: Deok-Hyung Lee , Si-Young Choi , Byeong-Chan Lee , Yong-Hoon Son , In-Soo Jung
- Applicant Address: KR Kyungki-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Kyungki-Do
- Agency: Myers Bigel Sibley & Sajovec
- Priority: KR10-2003-0068407 20031001
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A method of forming a semiconductor device may include forming a fin structure extending from a substrate. The fin structure may include first and second source/drain regions and a channel region therebetween, and the first and second source/drain regions may extend a greater distance from the substrate than the channel region. A gate insulating layer may be formed on the channel region, and a gate electrode may be formed on the gate insulating layer so that the gate insulating layer is between the gate electrode and the channel region. Related devices are also discussed.
Public/Granted literature
- US20050072992A1 Methods of forming semiconductor devices including fin structures and related devices Public/Granted day:2005-04-07
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