Invention Grant
- Patent Title: Anti-scattering attenuator structure for high energy particle radiation into integrated circuits
- Patent Title (中): 抗散射衰减器结构，用于高能粒子辐射成集成电路
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Application No.: US10818009Application Date: 2004-04-05
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Publication No.: US07205632B2Publication Date: 2007-04-17
- Inventor: Wen-Chin Lin , Denny D. Tang , Chao-Hsiung Wang
- Applicant: Wen-Chin Lin , Denny D. Tang , Chao-Hsiung Wang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/00
- IPC: H01L29/00
Abstract:
A microelectronics device including a semiconductor device located at least partially over a substrate, a bombarded area located at least partially over the substrate and adjacent the semiconductor device, and a bombarded attenuator interposing the semiconductor device and the bombarded area.
Public/Granted literature
- US20050227493A1 Anti-scattering attenuator structure for high energy particle radiation into integrated circuits Public/Granted day:2005-10-13
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