Connection technology for power semiconductors comprising a layer of electrically insulating material that follows the surface contours

Invention Grant

US07208347B2 Connection technology for power semiconductors comprising a layer of electrically insulating material that follows the surface contours 有权

Title translation: 功率半导体的连接技术包括一层遵循表面轮廓的电绝缘材料

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Patent Title: Connection technology for power semiconductors comprising a layer of electrically insulating material that follows the surface contours
Patent Title (中): 功率半导体的连接技术包括一层遵循表面轮廓的电绝缘材料
Application No.: US10547173

Application Date: 2004-01-26
Publication No.: US07208347B2

Publication Date: 2007-04-24
Inventor: Norbert Seliger , Karl Weidner , Jörg Zapf
Applicant: Norbert Seliger , Karl Weidner , Jörg Zapf
Applicant Address: DE Munich
Assignee: Siemens Aktiengesellschaft
Current Assignee: Siemens Aktiengesellschaft
Current Assignee Address: DE Munich
Priority: DE10308978 20030228
International Application: PCT/EP2004/000629 WO 20040126
International Announcement: WO2004/077548 WO 20040910
Main IPC: H01L21/44
IPC: H01L21/44 ; H01L21/48 ; H01L21/50

Connection technology for power semiconductors comprising a layer of electrically insulating material that follows the surface contours

Abstract:

A layer of electrically insulating material is applied to a substrate and a component located thereon, in such a way that said layer follows the surface contours.

Abstract(Chinese):

将一层电绝缘材料施加到基板和位于其上的部件，使得所述层遵循表面轮廓。

Public/Granted literature

US20060192290A1 Connection technology for power semiconductors comprising a layer of electrically insulating material that follows the surface contours Public/Granted day:2006-08-31

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Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/44	....用H01L21/36至H01L21/428各组不包含的方法或设备在半导体材料上制造电极的