公开(公告)号：US07855451B2

公开(公告)日：2010-12-21

申请号：US11728900

申请日：2007-03-27

申请人： Norbert Seliger ,  Karl Weidner ,  Jörg Zapf

发明人： Norbert Seliger ,  Karl Weidner ,  Jörg Zapf

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L23/12 ,  H01L23/14

CPC分类号： H01L24/82 ,  H01L23/5389 ,  H01L24/24 ,  H01L25/072 ,  H01L2224/2402 ,  H01L2224/24051 ,  H01L2224/24225 ,  H01L2224/24226 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/15787 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2224/48 ,  H01L2924/00 ,  H01L2924/2076 ,  H01L2924/01004 ,  H01L2924/00015

摘要： A layer of electrically insulating material is applied to a substrate and a component located thereon, in such a way that said layer follows the surface contours.

摘要翻译： 将一层电绝缘材料施加到基板和位于其上的部件，使得所述层遵循表面轮廓。

公开(公告)号：US07427532B2

公开(公告)日：2008-09-23

申请号：US10547119

申请日：2004-01-23

申请人： Norbert Seliger ,  Karl Weidner ,  Jörg Zapf

发明人： Norbert Seliger ,  Karl Weidner ,  Jörg Zapf

IPC分类号： H01L21/50 ,  H01L21/48

CPC分类号： H01L23/3735 ,  H01L24/24 ,  H01L24/82 ,  H01L2224/24011 ,  H01L2224/2402 ,  H01L2224/24051 ,  H01L2224/24225 ,  H01L2224/24226 ,  H01L2224/45124 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/157 ,  H01L2924/15787 ,  H01L2924/15798 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/48

摘要： According to the invention, a layer made of an electrically insulating material is applied to a substrate and a component that is arranged thereupon in such way that said layer follows the surface contour formed by the substrate and the component.

摘要翻译： 根据本发明，将由电绝缘材料制成的层施加到基板和其上配置的部件，使得所述层遵循由基板和部件形成的表面轮廓。

公开(公告)号：US07208347B2

公开(公告)日：2007-04-24

申请号：US10547173

申请日：2004-01-26

申请人： Norbert Seliger ,  Karl Weidner ,  Jörg Zapf

发明人： Norbert Seliger ,  Karl Weidner ,  Jörg Zapf

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L24/82 ,  H01L23/5389 ,  H01L24/24 ,  H01L25/072 ,  H01L2224/2402 ,  H01L2224/24051 ,  H01L2224/24225 ,  H01L2224/24226 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/15787 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2224/48 ,  H01L2924/00 ,  H01L2924/2076 ,  H01L2924/01004 ,  H01L2924/00015

摘要： A layer of electrically insulating material is applied to a substrate and a component located thereon, in such a way that said layer follows the surface contours.

摘要翻译： 将一层电绝缘材料施加到基板和位于其上的部件，使得所述层遵循表面轮廓。

公开(公告)号：US20060252253A1

公开(公告)日：2006-11-09

申请号：US10547119

申请日：2004-01-23

申请人： Norbert Seliger ,  Karl Weidner ,  Jörg Zapf

发明人： Norbert Seliger ,  Karl Weidner ,  Jörg Zapf

IPC分类号： H01L21/4763

CPC分类号： H01L23/3735 ,  H01L24/24 ,  H01L24/82 ,  H01L2224/24011 ,  H01L2224/2402 ,  H01L2224/24051 ,  H01L2224/24225 ,  H01L2224/24226 ,  H01L2224/45124 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/157 ,  H01L2924/15787 ,  H01L2924/15798 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/48

摘要： According to the invention, a layer made of an electrically insulating material is applied to a substrate and a component that is arranged thereupon in such way that said layer follows the surface contour formed by the substrate and the component.

摘要翻译： 根据本发明，将由电绝缘材料制成的层施加到基板和其上布置的部件，使得所述层遵循由基板和部件形成的表面轮廓。

公开(公告)号：US07807931B2

公开(公告)日：2010-10-05

申请号：US10551207

申请日：2004-03-09

申请人： Franz Auerbach ,  Bernd Gutsmann ,  Thomas Licht ,  Norbert Seliger ,  Karl Weidner ,  Jörg Zapf

发明人： Franz Auerbach ,  Bernd Gutsmann ,  Thomas Licht ,  Norbert Seliger ,  Karl Weidner ,  Jörg Zapf

IPC分类号： H05K1/16

CPC分类号： H01L23/552 ,  H01L23/49844 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/36 ,  H01L24/40 ,  H01L24/82 ,  H01L24/86 ,  H01L24/97 ,  H01L2224/45124 ,  H01L2224/73267 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01058 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2224/82 ,  H01L2924/00 ,  H01L2224/48 ,  H01L2224/37099

摘要： In an arrangement having at least one substrate, at least one electrical component is disposed on a surface section of the substrate and is provided with an electrical contact area, and at least one electrical contact lug has an electrical connecting area electrically contacting the contact area of the component. The connecting area of the contact lug and the contact area of the component are interconnected so that at least one zone of the contact lug protrudes beyond the area of the component. The contact lug is provided with at least one electrically conducting film while the electrically conducting film is provided with the electrical connecting area of the contact lug. The arrangement is particularly useful for large-area, low-inductive contacting of power semiconductor chips, as it allows for high current density.

摘要翻译： 在具有至少一个基板的布置中，至少一个电气部件设置在基板的表面部分上并且设置有电接触区域，并且至少一个电接触凸耳具有电接触区域的接触面积 组件。 接触片的连接区域和部件的接触区域互连，使得接触片的至少一个区域突出超出部件的区域。 接触片设置有至少一个导电膜，而导电膜设置有接触片的电连接区域。 这种布置对于功率半导体芯片的大面积低电感接触特别有用，因为它允许高电流密度。

公开(公告)号：US07402457B2

公开(公告)日：2008-07-22

申请号：US10491137

申请日：2002-09-25

申请人： Kerstin Häse ,  Laurence Amigues ,  Herbert Schwarzbauer ,  Norbert Seliger ,  Karl Weidner ,  Jörg Zapf ,  Matthias Rebhan

发明人： Kerstin Häse ,  Laurence Amigues ,  Herbert Schwarzbauer ,  Norbert Seliger ,  Karl Weidner ,  Jörg Zapf ,  Matthias Rebhan

IPC分类号： H01L21/00

CPC分类号： H05K3/4605 ,  H01L23/051 ,  H01L23/3735 ,  H01L23/482 ,  H01L24/24 ,  H01L24/82 ,  H01L25/072 ,  H01L2224/2402 ,  H01L2224/24051 ,  H01L2224/24225 ,  H01L2224/24226 ,  H01L2224/45124 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01058 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01L2924/3025 ,  H05K1/0306 ,  H05K3/108 ,  H05K3/32 ,  H05K3/4632 ,  H05K2201/0129 ,  H05K2201/0154 ,  H05K2203/068 ,  H05K2203/085 ,  H05K2203/1469 ,  H01L2924/00 ,  H01L2224/48

摘要： A film, based on polyimide or epoxy, is laminated onto a surface of a substrate under a vacuum, so that the film closely covers the surface and adheres thereto. Contact surfaces to be formed on the surface are uncovered by opening windows in the film. A contact is established in a plane manner between each uncovered contact surface and a layer of metal. This establishes a large-surface contact providing high current density for power semiconductor chips.

摘要翻译： 将基于聚酰亚胺或环氧树脂的薄膜在真空下层压到基材的表面上，使得薄膜紧密地覆盖表面并附着在其上。 在表面上形成的接触表面通过打开薄膜中的窗口而被覆盖。 在每个未覆盖的接触表面和一层金属之间以平面方式建立接触。 这就形成了大面积接触，为功率半导体芯片提供高电流密度。

公开(公告)号：US08261439B2

公开(公告)日：2012-09-11

申请号：US12733507

申请日：2008-08-04

申请人： Axel Kaltenbacher ,  Michael Kaspar ,  Gernot Schimetta ,  Karl Weidner ,  Robert Weinke ,  Jörg Zapf

发明人： Axel Kaltenbacher ,  Michael Kaspar ,  Gernot Schimetta ,  Karl Weidner ,  Robert Weinke ,  Jörg Zapf

IPC分类号： H01R43/00

CPC分类号： H01L24/33 ,  H01L23/3735 ,  H01L23/49562 ,  H01L23/5389 ,  H01L24/18 ,  H01L24/36 ,  H01L24/40 ,  H01L24/73 ,  H01L24/82 ,  H01L24/83 ,  H01L25/072 ,  H01L2224/18 ,  H01L2224/82039 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2224/92144 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/30107 ,  Y10T29/4913 ,  Y10T29/49144 ,  Y10T29/49146 ,  Y10T29/49169 ,  H01L2924/00 ,  H01L2924/00014

摘要： One unhoused electronic component, e.g., a semiconductor power component, has at least one connecting surface disposed on a top side and/or on a bottom side for fastening and/or for electric contacting. One side of the component is attached to and/or electrically contacts a direct copper bonding ceramic substrate, at an opposing connecting surface in the region of the connecting surface. An electrically insulating carrier film is created on the substrate on the side facing the component outside the region of the connecting surface and extending beyond the bottom side. An electrically conducting conductor part is attached to and/or electrically contacts the connecting surface on the top side. A pre-formed, three dimensional structure is formed extending beyond the area of the top side, thus creating an electrically insulating mass between the carrier film and the three-dimensional structure of the conductor part.

摘要翻译： 一个未安置的电子部件，例如半导体功率部件，具有设置在顶侧和/或底侧上的用于紧固和/或电接触的至少一个连接表面。 部件的一侧在连接表面的区域中的相对的连接表面处附接到和/或电接触直接铜结合陶瓷基板。 在基板上在连接表面的区域外侧面向组件的一侧上形成电绝缘载体膜，并延伸超过底侧。 导电导体部分附接到和/或电接触顶侧上的连接表面。 形成延伸超过顶侧区域的预先形成的三维结构，从而在载体膜和导体部分的三维结构之间形成电绝缘物质。

公开(公告)号：US20100208438A1

公开(公告)日：2010-08-19

申请号：US12733507

申请日：2008-08-04

申请人： Axel Kaltenbacher ,  Michael Kaspar ,  Gernot Schimetta ,  Karl Weidner ,  Robert Weinke ,  Jörg Zapf

发明人： Axel Kaltenbacher ,  Michael Kaspar ,  Gernot Schimetta ,  Karl Weidner ,  Robert Weinke ,  Jörg Zapf

IPC分类号： H05K7/02 ,  H05K13/00

CPC分类号： H01L24/33 ,  H01L23/3735 ,  H01L23/49562 ,  H01L23/5389 ,  H01L24/18 ,  H01L24/36 ,  H01L24/40 ,  H01L24/73 ,  H01L24/82 ,  H01L24/83 ,  H01L25/072 ,  H01L2224/18 ,  H01L2224/82039 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2224/92144 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/30107 ,  Y10T29/4913 ,  Y10T29/49144 ,  Y10T29/49146 ,  Y10T29/49169 ,  H01L2924/00 ,  H01L2924/00014

摘要： One unhoused electronic component, e.g., a semiconductor power component, has at least one connecting surface disposed on a top side and/or on a bottom side for fastening and/or for electric contacting. One side of the component is attached to and/or electrically contacts a direct copper bonding ceramic substrate, at an opposing connecting surface in the region of the connecting surface. An electrically insulating carrier film is created on the substrate on the side facing the component outside the region of the connecting surface and extending beyond the bottom side. An electrically conducting conductor part is attached to and/or electrically contacts the connecting surface on the top side. A pre-formed, three dimensional structure is formed extending beyond the area of the top side, thus creating an electrically insulating mass between the carrier film and the three-dimensional structure of the conductor part.

摘要翻译： 一个未安置的电子部件，例如半导体功率部件，具有设置在顶侧和/或底侧上的用于紧固和/或电接触的至少一个连接表面。 部件的一侧在连接表面的区域中的相对的连接表面处附接到和/或电接触直接铜结合陶瓷基板。 在基板上在连接表面的区域外侧面向组件的一侧上形成电绝缘载体膜，并延伸超过底侧。 导电导体部分附接到和/或电接触顶侧上的连接表面。 形成延伸超过顶侧区域的预先形成的三维结构，从而在载体膜和导体部分的三维结构之间形成电绝缘物质。

公开(公告)号：US20060248716A1

公开(公告)日：2006-11-09

申请号：US10547174

申请日：2004-01-15

申请人： Karl Weidner ,  Prof. Eckhard Wolfgang ,  Jörg Zapf

发明人： Karl Weidner ,  Prof. Eckhard Wolfgang ,  Jörg Zapf

IPC分类号： H01L21/84

CPC分类号： H01L23/4822 ,  H01L21/568 ,  H01L21/6835 ,  H01L24/19 ,  H01L24/24 ,  H01L24/82 ,  H01L2224/2402 ,  H01L2224/24051 ,  H01L2224/24226 ,  H01L2224/24227 ,  H01L2224/82001 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01061 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01L2924/3025 ,  Y10T29/4913 ,  Y10T29/49144 ,  Y10T29/49149

摘要： A self-supporting contacting structure is directly produced on a component that does not have a housing by applying a layer made of non conducting material and a layer made of an electrically conductive material to the component and to a support and by subsequently removing these layers from said support.

摘要翻译： 通过将由非导电材料制成的层和由导电材料制成的层施加到组件和支撑件上并随后从其中除去这些层而直接在不具有外壳的部件上产生自支撑接触结构 说支持。

公开(公告)号：US09170226B2

公开(公告)日：2015-10-27

申请号：US13877316

申请日：2011-05-23

申请人： Maximilian Fleischer ,  Oliver Freudenberg ,  Harry Hedler ,  Markus Schieber ,  Manfred Schreiner ,  Karl Weidner ,  Kerstin Wiesner ,  Jörg Zapf

发明人： Maximilian Fleischer ,  Oliver Freudenberg ,  Harry Hedler ,  Markus Schieber ,  Manfred Schreiner ,  Karl Weidner ,  Kerstin Wiesner ,  Jörg Zapf

IPC分类号： H01L31/058 ,  G01N27/12 ,  B81B3/00

CPC分类号： G01N27/12 ,  B81B3/0081 ,  B81B2201/0214 ,  B81B2203/0127 ,  G01N27/128

摘要： At least two separate single-crystal silicon layers are formed in a micromechanical substrate which has a diaphragm in a partial region. The diaphragm has a thickness of less than 20 μm and includes part of a first of the single-crystal silicon layers. The substrate construction also includes a heating element configured to generate a temperature of more than 650° C. in at least part of the diaphragm. The substrate includes at least one diffusion barrier layer that reduces the oxidation of the first single-crystal silicon layer.

摘要翻译： 在具有部分区域中的隔膜的微机械基板中形成至少两个单独的单晶硅层。 隔膜的厚度小于20μm，并且包括第一单晶硅层的一部分。 衬底结构还包括配置成在隔膜的至少一部分中产生大于650℃的温度的加热元件。 衬底包括减少第一单晶硅层的氧化的至少一个扩散阻挡层。