发明授权
US07211446B2 Method of patterning a magnetic tunnel junction stack for a magneto-resistive random access memory
有权
图案化用于磁阻随机存取存储器的磁性隧道结叠层的方法
- 专利标题： Method of patterning a magnetic tunnel junction stack for a magneto-resistive random access memory
- 专利标题（中）： 图案化用于磁阻随机存取存储器的磁性隧道结叠层的方法
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申请号： US10709999申请日： 2004-06-11
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公开(公告)号： US07211446B2公开(公告)日： 2007-05-01
- 发明人: Michael C. Gaidis , David W. Abraham , Stephen L. Brown , Arunava Gupta , Chanro Park , Wolfgang Raberg
- 申请人： Michael C. Gaidis , David W. Abraham , Stephen L. Brown , Arunava Gupta , Chanro Park , Wolfgang Raberg
- 申请人地址： US NY Armonk DE Munich
- 专利权人： International Business Machines Corporation,Infineon Technologies AG
- 当前专利权人： International Business Machines Corporation,Infineon Technologies AG
- 当前专利权人地址： US NY Armonk DE Munich
- 代理商 Daryl K. Neff; Margaret A. Pepper
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method of patterning a magnetic tunnel junction (MTJ) stack is provided. According to such method, an MTJ stack is formed having a free layer, a pinned layer and a tunnel barrier layer disposed between the free layer and the pinned layer. A first area of the MTJ stack is masked while the free layer of the MTJ is exposed in a second area. The free layer is then rendered electrically and magnetically inactive in the second area.
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