摘要:
A method of patterning a magnetic tunnel junction (MTJ) stack is provided. According to such method, an MTJ stack is formed having a free layer, a pinned layer and a tunnel barrier layer disposed between the free layer and the pinned layer. A first area of the MTJ stack is masked while the free layer of the MTJ is exposed in a second area. The free layer is then rendered electrically and magnetically inactive in the second area.
摘要:
Encapsulating areas of metallization in a liner material, such as Tantalum, Tantalum Nitride, Silicon Carbide allows aggressive or harsh processing steps to be used. These aggresive processing steps offer the possibility of fabricating new device architectures. In addition, by encapsulating the areas of metallization, metal ion migration and electromigration can be prevented. Further, the encapsulated areas of metallization can serve as a self-aligning etch mask. Thus, vias etched between adjacent areas of metallization allow the area of the substrate allocated to the via to be significantly reduced without increasing the possibility of electrical shorts to the adjacent areas of metallization.
摘要:
A method for fabricating a synthetic antiferromagnetic device, includes depositing a reference layer on a first tantalum layer and including depositing a first cobalt iron boron layer, depositing a second cobalt iron boron layer on the first cobalt iron boron layer, depositing a second Ta layer on the second cobalt iron boron layer, depositing a magnesium oxide spacer layer on the reference layer and depositing a cap layer on the magnesium oxide spacer layer.
摘要:
Novel methods for reliably and reproducibly forming magnetic tunnel junctions in integrated circuits are described. In accordance with aspects of the invention, sidewall spacer features are utilized during the processing of the film stack. Advantageously, these sidewall spacer features create a tapered masking feature which helps to avoid byproduct redeposition during the etching of the MTJ film stack, thereby improving process yield. Moreover, the sidewall spacer features may be used as encapsulating layers during subsequent processing steps and as vertical contacts to higher levels of metallization.
摘要:
A method for fabricating a synthetic antiferromagnetic device, includes depositing a reference layer on a first tantalum layer and including depositing a first cobalt iron boron layer, depositing a second cobalt iron boron layer on the first cobalt iron boron layer, depositing a second Ta layer on the second cobalt iron boron layer, depositing a magnesium oxide spacer layer on the reference layer and depositing a cap layer on the magnesium oxide spacer layer.
摘要:
Novel methods for reliably and reproducibly forming magnetic tunnel junctions in integrated circuits are described. In accordance with aspects of the invention, sidewall spacer features are utilized during the processing of the film stack. Advantageously, these sidewall spacer features create a tapered masking feature which helps to avoid byproduct redeposition during the etching of the MTJ film stack, thereby improving process yield. Moreover, the sidewall spacer features may be used as encapsulating layers during subsequent processing steps and as vertical contacts to higher levels of metallization.
摘要:
A synthetic antiferromagnetic device includes a reference layer having a first and second ruthenium layer, a magnesium oxide spacer layer disposed on the reference layer, a cobalt iron boron layer disposed on the magnesium oxide spacer layer and a third ruthenium layer disposed on the cobalt iron boron layer, the third ruthenium layer having a thickness of approximately 0 angstroms to 18 angstroms.
摘要:
A method for fabricating a synthetic antiferromagnetic device, includes depositing a magnesium oxide spacer layer on a reference layer having a first and second ruthenium layer, depositing a cobalt iron boron layer on the magnesium oxide spacer layer; and depositing a third ruthenium layer on the cobalt iron boron layer, the third ruthenium layer having a thickness of approximately 0-18 angstroms.
摘要:
A synthetic antiferromagnetic device includes a first tantalum layer, a reference layer disposed on the first tantalum layer and including a first cobalt iron boron layer, a second cobalt iron boron layer disposed on the first cobalt iron boron layer, a third cobalt iron boron layer and a second tantalum layer disposed between the second and third cobalt iron boron layers, a magnesium oxide spacer layer disposed on the reference layer and a cap layer disposed on the magnesium oxide spacer layer.
摘要:
A synthetic antiferromagnetic device includes a reference layer having a first and second ruthenium layer, a magnesium oxide spacer layer disposed on the reference layer, a cobalt iron boron layer disposed on the magnesium oxide spacer layer and a third ruthenium layer disposed on the cobalt iron boron layer, the third ruthenium layer having a thickness of approximately 0 angstroms to 18 angstroms.