发明授权
US07211868B2 Protection circuit device using MOSFETs and a method of manufacturing the same
失效
使用MOSFET的保护电路装置及其制造方法
- 专利标题: Protection circuit device using MOSFETs and a method of manufacturing the same
- 专利标题(中): 使用MOSFET的保护电路装置及其制造方法
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申请号: US09809856申请日: 2001-03-16
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公开(公告)号: US07211868B2公开(公告)日: 2007-05-01
- 发明人: Noriaki Sakamoto , Yoshiyuki Kobayashi , Hirokazu Fukuda , Hiroki Etou , Kouji Takahashi
- 申请人: Noriaki Sakamoto , Yoshiyuki Kobayashi , Hirokazu Fukuda , Hiroki Etou , Kouji Takahashi
- 申请人地址: JP Osaka
- 专利权人: Sanyo Electric Co., Ltd.
- 当前专利权人: Sanyo Electric Co., Ltd.
- 当前专利权人地址: JP Osaka
- 代理机构: Fish & Richardson P.C.
- 优先权: JPP.2000-266709 20000904
- 主分类号: H01L23/62
- IPC分类号: H01L23/62
摘要:
A protection circuit device using a MOSFET has a plural of conductive paths separated electrically, a MOSFET chip integrating two power MOSFETs in one chip where a gate electrode and a source electrode are fixed on the desired conductive path, conductive material provided on a common drain electrode of the MOSFET, and insulating resin covering said MOSFET and supporting said conductive path in one body. Removing a drawing-around of the common drain electrode and fixing the source electrode directly on the conductive path, low ON-state resistance is realized.