公开(公告)号：US07211868B2

公开(公告)日：2007-05-01

申请号：US09809856

申请日：2001-03-16

申请人： Noriaki Sakamoto ,  Yoshiyuki Kobayashi ,  Hirokazu Fukuda ,  Hiroki Etou ,  Kouji Takahashi

发明人： Noriaki Sakamoto ,  Yoshiyuki Kobayashi ,  Hirokazu Fukuda ,  Hiroki Etou ,  Kouji Takahashi

IPC分类号： H01L23/62

CPC分类号： H01L23/3107 ,  H01L21/4832 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/97 ,  H01L2221/68377 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01059 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A protection circuit device using a MOSFET has a plural of conductive paths separated electrically, a MOSFET chip integrating two power MOSFETs in one chip where a gate electrode and a source electrode are fixed on the desired conductive path, conductive material provided on a common drain electrode of the MOSFET, and insulating resin covering said MOSFET and supporting said conductive path in one body. Removing a drawing-around of the common drain electrode and fixing the source electrode directly on the conductive path, low ON-state resistance is realized.

摘要翻译： 使用MOSFET的保护电路装置具有多个电气分离的导电路径，将芯片中的两个功率MOSFET集成在一个芯片中的MOSFET芯片，其中栅电极和源电极固定在期望的导电路径上，设置在公共漏极上的导电材料 的MOSFET，以及覆盖所述MOSFET并且将所述导电路径支撑在一个主体中的绝缘树脂。 除去公共漏电极的附近并将源电极直接固定在导电路径上，实现低导通状态电阻。

公开(公告)号：US06545364B2

公开(公告)日：2003-04-08

申请号：US09810110

申请日：2001-03-16

申请人： Noriaki Sakamoto ,  Yoshiyuki Kobayashi ,  Junji Sakamoto ,  Shigeaki Mashimo ,  Katsumi Okawa ,  Eiju Maehara ,  Kouji Takahashi ,  Hirokazu Fukuda ,  Hiroki Etou

发明人： Noriaki Sakamoto ,  Yoshiyuki Kobayashi ,  Junji Sakamoto ,  Shigeaki Mashimo ,  Katsumi Okawa ,  Eiju Maehara ,  Kouji Takahashi ,  Hirokazu Fukuda ,  Hiroki Etou

IPC分类号： H01L2348

CPC分类号： H01L24/40 ,  H01L21/4821 ,  H01L21/4832 ,  H01L23/3107 ,  H01L23/49562 ,  H01L24/37 ,  H01L24/48 ,  H01L24/49 ,  H01L24/97 ,  H01L2221/68377 ,  H01L2224/05599 ,  H01L2224/16 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/371 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/48465 ,  H01L2224/49111 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8485 ,  H01L2224/85399 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01043 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01059 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/3511 ,  H05K1/185 ,  H05K3/06 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： After a trench 54 is formed in a conductive foil 60, a circuit element is mounted in a flip chip method. Then, an insulating resin 50 is covered on the conductive foil 60 as a support substrate. After reversion, the conductive foil 60 is polished over the insulating resin 50 as a support substrate at this time to separate the conductive paths. Accordingly, a circuit device having the conductive paths 51 and the circuit elements 52 supported by the insulating resin 50 can be produced without employing the support substrate.

公开(公告)号：US20050029588A1

公开(公告)日：2005-02-10

申请号：US10941183

申请日：2004-09-15

申请人： Noriaki Sakamoto ,  Yoshiyuki Kobayashi ,  Hirokazu Fukuda ,  Hiroki Etou ,  Kouji Takahashi

发明人： Noriaki Sakamoto ,  Yoshiyuki Kobayashi ,  Hirokazu Fukuda ,  Hiroki Etou ,  Kouji Takahashi

IPC分类号： H01L27/04 ,  H01L21/48 ,  H01L21/822 ,  H01L23/31 ,  H01L23/49 ,  H01L23/58 ,  H01L29/78 ,  H01L29/76

CPC分类号： H01L23/3107 ,  H01L21/4832 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/97 ,  H01L2221/68377 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01059 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A protection circuit device using a MOSFET has a plural of conductive paths separated electrically, a MOSFET chip integrating two power MOSFETs in one chip where a gate electrode and a source electrode are fixed on the desired conductive path, conductive material provided on a common drain electrode of the MOSFET, and insulating resin covering said MOSFET, and supporting said conductive path in one body. Removing a drawing-around of the common drain electrode and fixing the source electrode directly on the conductive path, low ON-state resistance is realized.

摘要翻译： 使用MOSFET的保护电路装置具有多个电气分离的导电路径，将芯片中的两个功率MOSFET集成在一个芯片中的MOSFET芯片，其中栅电极和源电极固定在期望的导电路径上，设置在公共漏极上的导电材料 的MOSFET，以及覆盖所述MOSFET的绝缘树脂，并且将所述导电路径支撑在一个主体中。 除去公共漏电极的附近并将源电极直接固定在导电路径上，实现低导通状态电阻。

公开(公告)号：US07173336B2

公开(公告)日：2007-02-06

申请号：US10347010

申请日：2003-01-17

申请人： Noriaki Sakamoto ,  Yoshiyuki Kobayashi ,  Junji Sakamoto ,  Shigeaki Mashimo ,  Katsumi Okawa ,  Eiju Maehara ,  Kouji Takahashi

发明人： Noriaki Sakamoto ,  Yoshiyuki Kobayashi ,  Junji Sakamoto ,  Shigeaki Mashimo ,  Katsumi Okawa ,  Eiju Maehara ,  Kouji Takahashi

IPC分类号： H01L23/48 ,  H01L29/40

CPC分类号： H05K1/188 ,  H01L21/4821 ,  H01L21/4832 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49575 ,  H01L23/49582 ,  H01L24/05 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/97 ,  H01L25/165 ,  H01L25/50 ,  H01L2221/68377 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05557 ,  H01L2224/05647 ,  H01L2224/16 ,  H01L2224/16245 ,  H01L2224/32057 ,  H01L2224/32245 ,  H01L2224/4807 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4845 ,  H01L2224/48464 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2224/85447 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01059 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H05K1/187 ,  H05K3/06 ,  H05K3/202 ,  H01L2224/85 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/01046 ,  H01L2924/3512

摘要： A semiconductor device is provided wherein conductive paths 40, formed of crystal that grows better along the X-Y axis than along the Z axis, are embedded in an insulating resin 44, and the back surface of the conductive path 40 is exposed through the insulating resin 44 and sealed. With this arrangement, fractures of the conductive paths 40 embedded in the insulating resin 44 are suppressed.

摘要翻译： 提供一种半导体器件，其中由晶体形成的导电路径40沿着XY轴比沿着Z轴更好地嵌入绝缘树脂44中，并且导电路径40的背表面通过绝缘树脂44暴露 并密封。 通过这种布置，抑制了嵌入在绝缘树脂44中的导电通路40的断裂。

公开(公告)号：US07091606B2

公开(公告)日：2006-08-15

申请号：US10372497

申请日：2003-02-24

申请人： Noriaki Sakamoto ,  Yoshiyuki Kobayashi ,  Junji Sakamoto ,  Shigeaki Mashimo ,  Katsumi Okawa ,  Eiju Maehara ,  Kouji Takahashi

发明人： Noriaki Sakamoto ,  Yoshiyuki Kobayashi ,  Junji Sakamoto ,  Shigeaki Mashimo ,  Katsumi Okawa ,  Eiju Maehara ,  Kouji Takahashi

IPC分类号： H01L23/34 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/4821 ,  H01L21/4832 ,  H01L21/56 ,  H01L23/3107 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/97 ,  H01L25/105 ,  H01L25/165 ,  H01L25/50 ,  H01L2221/68377 ,  H01L2224/05554 ,  H01L2224/16 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48639 ,  H01L2224/48739 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/85439 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01059 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13055 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/19106 ,  H01L2924/3511 ,  H05K1/188 ,  H05K3/06 ,  H05K3/202 ,  H01L2924/00014 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/00012

摘要： After a trench 54 is formed in a conductive foil 60, the circuit elements are mounted, and the insulating resin is applied on the conductive foil 60 as the support substrate. After being inverted, the conductive foil 60 is polished on the insulating resin 50 as the support substrate for separation into the conductive paths. Accordingly, it is possible to fabricate the circuit device in which the conductive paths 51 and the circuit elements 52 are supported by the insulating resin 50, without the use of the support substrate. And the interconnects L1 to L3 requisite for the circuit are formed, and can be prevented from slipping because of the curved structure 59 and a visor 58.

摘要翻译： 在导电箔60中形成沟槽54之后，安装电路元件，并且将绝缘树脂施加在作为支撑基板的导电箔60上。 反转后，将导电箔60作为用于分离的导电路径的支撑基板在绝缘树脂50上进行研磨。 因此，可以制造其中导电通路51和电路元件52由绝缘树脂50支撑的电路装置，而不使用支撑基板。 并且形成电路所需的互连线L 1至L 3，并且可以防止由于弯曲结构59和遮阳板58而滑动。

公开(公告)号：US20050056916A1

公开(公告)日：2005-03-17

申请号：US10918105

申请日：2004-08-13

申请人： Noriaki Sakamoto ,  Yoshiyuki Kobayashi ,  Junji Sakamoto ,  Shigeaki Mashimo ,  Katsumi Okawa ,  Eiju Maehara ,  Kouji Takahashi

发明人： Noriaki Sakamoto ,  Yoshiyuki Kobayashi ,  Junji Sakamoto ,  Shigeaki Mashimo ,  Katsumi Okawa ,  Eiju Maehara ,  Kouji Takahashi

IPC分类号： H05K1/02 ,  H01L21/48 ,  H01L21/56 ,  H01L21/98 ,  H01L23/31 ,  H01L25/10 ,  H01L25/16 ,  H05K1/18 ,  H05K3/06 ,  H05K3/20 ,  H01L23/495

CPC分类号： H01L24/48 ,  H01L21/4821 ,  H01L21/4832 ,  H01L21/56 ,  H01L23/3107 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/97 ,  H01L25/0655 ,  H01L25/105 ,  H01L25/165 ,  H01L25/50 ,  H01L2221/68377 ,  H01L2224/05554 ,  H01L2224/16 ,  H01L2224/29101 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48639 ,  H01L2224/48739 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/83815 ,  H01L2224/83851 ,  H01L2224/85205 ,  H01L2224/85439 ,  H01L2224/97 ,  H01L2225/1029 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01059 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/13055 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/19106 ,  H01L2924/3511 ,  H05K1/187 ,  H05K1/188 ,  H05K3/06 ,  H05K3/202 ,  H01L2924/00014 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/07811 ,  H01L2224/83205

摘要： After a trench 54 is formed in a conductive foil 60, the circuit elements are mounted, and the insulating resin is applied on the conductive foil 60 as the support substrate. After being inverted, the conductive foil 60 is polished on the insulating resin 50 as the support substrate for separation into the conductive paths. Accordingly, it is possible to fabricate the circuit device in which the conductive paths 51 and the circuit elements 52 are supported by the insulating resin 50, without the use of the support substrate. And the interconnects L1 to L3 requisite for the circuit are formed, and can be prevented from slipping because of the curved structure 59 and a visor 58.

摘要翻译： 在导电箔60中形成沟槽54之后，安装电路元件，并且将绝缘树脂施加在作为支撑基板的导电箔60上。 反转后，将导电箔60作为用于分离的导电路径的支撑基板在绝缘树脂50上进行研磨。 因此，可以制造其中导电通路51和电路元件52由绝缘树脂50支撑的电路装置，而不使用支撑基板。 并且形成电路所需的互连L1至L3，并且可以防止由于弯曲结构59和遮阳板58而滑动。

公开(公告)号：US06812410B2

公开(公告)日：2004-11-02

申请号：US09810151

申请日：2001-03-16

申请人： Noriaki Sakamoto ,  Yoshiyuki Kobayashi ,  Junji Sakamoto ,  Yukio Okada ,  Yusuke Igarashi ,  Eiju Maehara ,  Kouji Takahashi

发明人： Noriaki Sakamoto ,  Yoshiyuki Kobayashi ,  Junji Sakamoto ,  Yukio Okada ,  Yusuke Igarashi ,  Eiju Maehara ,  Kouji Takahashi

IPC分类号： H05K116

CPC分类号： H01L24/32 ,  H01L21/4832 ,  H01L23/36 ,  H01L23/4334 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/97 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16245 ,  H01L2224/32057 ,  H01L2224/32245 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01059 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/18165 ,  H01L2924/3011 ,  H01L2924/351 ,  H05K1/0204 ,  H05K1/021 ,  H05K1/182 ,  H05K1/189 ,  H05K3/26 ,  H05K3/281 ,  H05K3/303 ,  H05K2201/10416 ,  H05K2201/10727 ,  H05K2201/10734 ,  H05K2201/2036 ,  Y02P70/613 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01026 ,  H01L2924/01028 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2224/05599

摘要： A first metal film 14 made of a Cu plated film is formed on a radiation substrate 13A made of Al, and an island 15 exposed from a back surface of a semiconductor device 10 is adhered thereto. At that time, the back surface of the semiconductor device 10 is brought into contact with contact areas, and a first opening portion OP is opened larger than an arranging area of the semiconductor device 10. Accordingly, the cleaning can be executed via the first opening portion OP exposed from peripheries of the semiconductor device 10. In addition, the heat generated from semiconductor elements 16 can be radiated excellently from the island 15 via a second supporting member 13A.

摘要翻译： 在由Al制成的辐射基板13A上形成由Cu镀膜形成的第一金属膜14，并且从半导体器件10的背面露出的岛15被粘附到其上。 此时，半导体器件10的背面与接触区域接触，并且第一开口部分OP打开得比半导体器件10的布置区域大。因此，可以经由第一开口 部分OP从半导体器件10的周边露出。此外，从半导体元件16产生的热能够经由第二支撑构件13A从岛15辐射良好。

公开(公告)号：US06624511B2

公开(公告)日：2003-09-23

申请号：US09821447

申请日：2001-03-29

申请人： Noriaki Sakamoto ,  Yoshiyuki Kobayashi ,  Eiju Maehara ,  Noriyasu Sakai ,  Hitoshi Takagishi ,  Kouji Takahashi ,  Kazuhisa Kusano

发明人： Noriaki Sakamoto ,  Yoshiyuki Kobayashi ,  Eiju Maehara ,  Noriyasu Sakai ,  Hitoshi Takagishi ,  Kouji Takahashi ,  Kazuhisa Kusano

IPC分类号： H01L2348

CPC分类号： H01L25/16 ,  H01L21/4832 ,  H01L23/3107 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2221/68377 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/48465 ,  H01L2224/48472 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L2224/85424 ,  H01L2224/85447 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01059 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12042 ,  H01L2924/1301 ,  H01L2924/13055 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/2076 ,  H05K1/185 ,  H05K3/06 ,  H05K3/202 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/20754 ,  H01L2924/00015

摘要： The semiconductor elements for the small signal type circuits and the Au wire for connection are integrated as one package to produce the semiconductor devices 30A, 31A, 32, 33A, 34A and 38. In this way, the wire bonding of Au can be omitted, and the wire bonding of the small diameter Al wire and the large diameter Al wire is only required to complete the connection of the fine metal wire. These semiconductor devices have a plurality of circuit elements as one package, so that the mounting operation on the mounting board can be significantly reduced.

摘要翻译： 用于小信号电路的半导体元件和用于连接的Au线被集成为一个封装以制造半导体器件30A，31A，32,33A，34A和38.这样，可以省略Au的引线接合， 并且仅需要小直径Al线和大直径Al线的引线接合来完成细金属线的连接。这些半导体器件具有作为一个封装的多个电路元件，从而在安装上的安装操作 板可以大大减少。

公开(公告)号：US06548328B1

公开(公告)日：2003-04-15

申请号：US09671135

申请日：2000-09-27

申请人： Noriaki Sakamoto ,  Yoshiyuki Kobayashi ,  Junji Sakamoto ,  Shigeaki Mashimo ,  Katsumi Okawa ,  Eiju Maehara ,  Kouji Takahashi

发明人： Noriaki Sakamoto ,  Yoshiyuki Kobayashi ,  Junji Sakamoto ,  Shigeaki Mashimo ,  Katsumi Okawa ,  Eiju Maehara ,  Kouji Takahashi

IPC分类号： H01L2144

CPC分类号： H01L24/48 ,  H01L21/4821 ,  H01L21/4832 ,  H01L21/56 ,  H01L23/3107 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/97 ,  H01L25/0655 ,  H01L25/105 ,  H01L25/165 ,  H01L25/50 ,  H01L2221/68377 ,  H01L2224/05554 ,  H01L2224/16 ,  H01L2224/29101 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48639 ,  H01L2224/48739 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/83815 ,  H01L2224/83851 ,  H01L2224/85205 ,  H01L2224/85439 ,  H01L2224/97 ,  H01L2225/1029 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01059 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/13055 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/19106 ,  H01L2924/3511 ,  H05K1/187 ,  H05K1/188 ,  H05K3/06 ,  H05K3/202 ,  H01L2924/00014 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/07811 ,  H01L2224/83205

摘要： After a trench 54 is formed in a conductive foil 60, the circuit elements are mounted, and the insulating resin is applied on the conductive foil 60 as the support substrate. After being inverted, the conductive foil 60 is polished on the insulating resin 50 as the support substrate for separation into the conductive paths. Accordingly, it is possible to fabricate the circuit device in which the conductive paths 51 and the circuit elements 52 are supported by the insulating resin 50, without the use of the support substrate. And the interconnects L1 to L3 requisite for the circuit are formed, and can be prevented from slipping because of the curved structure 59 and a visor 58.

摘要翻译： 在导电箔60中形成沟槽54之后，安装电路元件，并且将绝缘树脂施加在作为支撑基板的导电箔60上。 反转后，将导电箔60作为用于分离的导电路径的支撑基板在绝缘树脂50上进行研磨。 因此，可以制造其中导电通路51和电路元件52由绝缘树脂50支撑的电路装置，而不使用支撑基板。 并且形成电路所需的互连L1至L3，并且可以防止由于弯曲结构59和遮阳板58而滑动。

公开(公告)号：US06531370B2

公开(公告)日：2003-03-11

申请号：US09944322

申请日：2001-08-31

申请人： Noriaki Sakamoto ,  Yoshiyuki Kobayashi ,  Junji Sakamoto ,  Yukio Okada ,  Yusuke Igarashi ,  Eiju Maehara ,  Kouji Takahashi

发明人： Noriaki Sakamoto ,  Yoshiyuki Kobayashi ,  Junji Sakamoto ,  Yukio Okada ,  Yusuke Igarashi ,  Eiju Maehara ,  Kouji Takahashi

IPC分类号： H01L21331

CPC分类号： H01L22/20 ,  H01L21/4832 ,  H01L24/97 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01059 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H05K1/185 ,  H05K3/06 ,  H01L2924/00014 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/00012

摘要： After mounting portions (65) are formed in each block (62), circuit elements are mounted on the mounting portions (65) and molded with insulating resin (50). Then, the back surface of conductive foil (60) is etched to form conductive patterns 51in each block. Further, a plurality of blocks are bonded onto a adhesive sheet so that a testing step and a dicing step are carried out upon the blocks in a lump.