发明授权
- 专利标题： Memory cell with an asymmetric crystalline structure
- 专利标题（中）： 具有不对称晶体结构的记忆单元
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申请号： US11130983申请日： 2005-05-16
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公开(公告)号： US07214583B2公开(公告)日： 2007-05-08
- 发明人: Sheng Teng Hsu , Tingkai Li , David R. Evans , Wei-Wei Zhuang , Wei Pan
- 申请人： Sheng Teng Hsu , Tingkai Li , David R. Evans , Wei-Wei Zhuang , Wei Pan
- 申请人地址： US WA Camas
- 专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人地址： US WA Camas
- 代理机构： Law Office of Gerald Maliszewski
- 代理商 Gerald Maliszewski
- 主分类号： H01L21/8242
- IPC分类号： H01L21/8242
摘要：
Asymmetrically structured memory cells and a fabrication method are provided. The method comprises: forming a bottom electrode; forming an electrical pulse various resistance (EPVR) first layer having a polycrystalline structure over the bottom electrode; forming an EPVR second layer adjacent the first layer, with a nano-crystalline or amorphous structure; and, forming a top electrode overlying the first and second EPVR layers. EPVR materials include CMR, high temperature super conductor (HTSC), or perovskite metal oxide materials. In one aspect, the EPVR first layer is deposited with a metalorganic spin coat (MOD) process at a temperature in the range between 550 and 700 degrees C. The EPVR second layer is formed at a temperature less than, or equal to the deposition temperature of the first layer. After a step of removing solvents, the MOD deposited EPVR second layer is formed at a temperature less than, or equal to the 550 degrees C.
公开/授权文献
- US20050207265A1 Memory cell with an asymmetric crystalline structure 公开/授权日：2005-09-22
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