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发明授权
US07214588B2 Methods of forming memory cells with nonuniform floating gate structures 有权
用不均匀的浮栅结构形成记忆单元的方法

Methods of forming memory cells with nonuniform floating gate structures
摘要：
In a floating gate memory cell including a floating gate separated from an active region by a tunnel isolation region, a first one of the active region and the floating gate comprises a portion that protrudes towards a second one of the active region and the floating gate. In some embodiments, the protruding portion tapers toward the second one of the active region and the floating gate. The tunnel insulation layer may be narrowed at the protruding portion. Protruding portions may be formed on both the floating gate and the active region.
摘要（中）：

在包括通过隧道隔离区域与有源区域分离的浮动栅极的浮动栅极存储单元中，有源区域和浮置栅极中的第一个包括朝向有源区域和浮置栅极中的第二个突出的部分。 在一些实施例中，突出部分朝向有源区域和浮动栅极中的第二个逐渐变细。 隧道绝缘层可以在突出部分变窄。 突出部分可以形成在浮动栅极和有源区域两者上。

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