发明授权
- 专利标题: Booster circuit
- 专利标题(中): 增压电路
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申请号: US10535102申请日: 2003-09-26
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公开(公告)号: US07215179B2公开(公告)日: 2007-05-08
- 发明人: Takanori Yamazoe , Takeo Kanai
- 申请人: Takanori Yamazoe , Takeo Kanai
- 申请人地址: JP Tokyo
- 专利权人: Renesas Technology Corp.
- 当前专利权人: Renesas Technology Corp.
- 当前专利权人地址: JP Tokyo
- 代理机构: Antonelli, Terry, Stout & Kraus, LLP.
- 优先权: JP2002-333033 20021118
- 国际申请: PCT/JP03/12336 WO 20030926
- 国际公布: WO2004/047274 WO 20040603
- 主分类号: G05F1/10
- IPC分类号: G05F1/10
摘要:
The present invention relates to a booster circuit of a non-volatile memory requiring a plus or minus high voltage equal to or higher than a power-supply voltage. The present invention can generate a high voltage of approximately 12 V even at a low power-supply voltage equal to or lower than 3 V and generate not only a plus high voltage but also a minus high voltage by the same circuit. Also, by combining a body-controlled type parallel charge pump, which is a booster circuit according to the present invention, with a serial-type charge pump, two types of high voltages can be efficiently generated and a reduction in chip areas can be achieved.
公开/授权文献
- US20060006925A1 Booster circuit 公开/授权日:2006-01-12