发明授权
- 专利标题: Chemical vapor deposition apparatus
- 专利标题(中): 化学气相沉积装置
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申请号: US10750023申请日: 2003-12-31
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公开(公告)号: US07217326B2公开(公告)日: 2007-05-15
- 发明人: Ho Lee
- 申请人: Ho Lee
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd
- 当前专利权人: Samsung Electronics Co., Ltd
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: MacPherson Kwok Chen & Heid LLP
- 优先权: KR10-2003-0023398 20030414
- 主分类号: C23C16/455
- IPC分类号: C23C16/455 ; C23C16/00
摘要:
A chemical vapor deposition apparatus is provided, which includes: a chamber having an inner space; a gas feed member for supplying a gas into the chamber; a susceptor disposed in the chamber and supporting a substrate; a diffuser partitioning the inner space of the chamber into first and second partitions and having a plurality of holes connecting the first partition and the second partition for gas communication; a diffuser frame incorporated into the diffuser; and an insulating frame disposed between the chamber and the diffuser.
公开/授权文献
- US20040200413A1 Chemical vapor deposition apparatus 公开/授权日:2004-10-14
信息查询
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