Invention Grant
- Patent Title: Directed gas injection apparatus for semiconductor processing
- Patent Title (中): 用于半导体加工的定向气体注入装置
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Application No.: US10482210Application Date: 2002-06-20
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Publication No.: US07217336B2Publication Date: 2007-05-15
- Inventor: Eric J. Strang
- Applicant: Eric J. Strang
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- International Application: PCT/US02/16583 WO 20020620
- International Announcement: WO03/002860 WO 20030109
- Main IPC: H01L21/306
- IPC: H01L21/306 ; C23C16/455 ; C23C16/52 ; G06F19/00
Abstract:
A method and system (1) for utilizing shaped orifices (e.g., sonic and simple orifices, and divergent nozzles) in the gas inject system (20) as part of a plasma process system. By utilizing the shaped orifices, directionality of gas flow (25) can be improved. This improvement is especially beneficial in high aspect ratio processing.
Public/Granted literature
- US20040163761A1 Directed gas injection apparatus for semiconductor processing Public/Granted day:2004-08-26
Information query
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